Photoluminescence study of exciton-optical phonon scattering in bulk GaAs and GaAs quantum wells

A. Venu Gopal, Rajesh Kumar, A. S. Vengurlekar, A. Bosacchi, S. Franchi, L. N. Pfeiffer

Research output: Contribution to journalArticle

59 Citations (Scopus)

Abstract

We obtain the temperature dependence of the homogeneous linewidth of excitons in GaAs quantum wells (QWs) and bulk GaAs using photoluminescence measurements. The results indicate that exciton scattering rates with optical phonons are larger in bulk GaAs than in QWs.

Original languageEnglish
Pages (from-to)1858-1862
Number of pages5
JournalJournal of Applied Physics
Volume87
Issue number4
DOIs
Publication statusPublished - Feb 2000

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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