Photoluminescence in doped and annealed GeSe2 glass

M. Koós, I. Kósa Somogyi, V. A. Vassilyev

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Photodoping of GeSe2 glass with Ag, Zn, In and Sn shifted the centre of the photoluminescence (PL) band towards lower energies and gave rise to a decrease in its half width, but no new band appeared. The excitation spectrum at 77 K and the temperature dependence of the PL intensity of Ag-doped samples were measured in the temperature range (77-280) K. An activation energy of (253 ± 10) meV for non radiative transitions was foundat T > 210 K which is smaller than that measured in undoped GeSe2 glass. Thermal annealing shifted the peak of the PL band towards higher energies but had no effect on its half width.

Original languageEnglish
Pages (from-to)245-253
Number of pages9
JournalJournal of Non-Crystalline Solids
Volume43
Issue number2
DOIs
Publication statusPublished - 1981

Fingerprint

Photoluminescence
photoluminescence
Glass
glass
Activation energy
Annealing
activation energy
Temperature
temperature dependence
annealing
energy
excitation
temperature
Hot Temperature

ASJC Scopus subject areas

  • Ceramics and Composites
  • Electronic, Optical and Magnetic Materials

Cite this

Photoluminescence in doped and annealed GeSe2 glass. / Koós, M.; Kósa Somogyi, I.; Vassilyev, V. A.

In: Journal of Non-Crystalline Solids, Vol. 43, No. 2, 1981, p. 245-253.

Research output: Contribution to journalArticle

Koós, M. ; Kósa Somogyi, I. ; Vassilyev, V. A. / Photoluminescence in doped and annealed GeSe2 glass. In: Journal of Non-Crystalline Solids. 1981 ; Vol. 43, No. 2. pp. 245-253.
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