Photoinduced degradation of reverse-biased small-area a-Si:H Schottky barriers

Wolfgang Hanrieder, Gerhard Mader, Hans Meixner

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Photoinduced changes (Staebler-Wronski effect) in the photocurrent and dark current of a reverse-biased small-area Schottky barrier made from amorphous silicon are investigated. The well-known, small reductions in the photocurrent are contrasted with the large increases in the dark bias current. This behavior of the dark bias current is a new phenomenon and cannot be explained on the basis of a bulk mechanism. The indications are that even under high bias voltages recombination processes take place close to the interface and give rise to thermally reversible changes of the gap density-of-states. Special attention is paid to the bias voltage and wavelength dependence of the degradation effect. The results are discussed in qualitative terms.

Original languageEnglish
Pages (from-to)2681-2685
Number of pages5
JournalJournal of Applied Physics
Volume63
Issue number8
DOIs
Publication statusPublished - Dec 1 1988

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Photoinduced degradation of reverse-biased small-area a-Si:H Schottky barriers'. Together they form a unique fingerprint.

  • Cite this