Photoemission studies of 74Ge+ implantation synthesized Si1-xGex amorphous alloys

G. Pető, J. Kanski

Research output: Contribution to journalArticle

Abstract

Si(100) crystals were ion implanted by 74Ge+ to synthesize Si1-xGex alloys with x=0.5 and 5.0%. The as-implanted layers were identified as amorphous by means of electron diffraction, and the valence band density of states was measured by UV-photoemission. The spectra were found to depend strongly on the Ge concentration, and were very different from the previously reported data on amorphous Si. The modifications are tentatively interpreted in terms of rehybridization of the sp3 bonds, in analogy with the well-known sp3-sp2 transition in carbon.

Original languageEnglish
Pages (from-to)585-589
Number of pages5
JournalSolid State Communications
Volume121
Issue number11
Publication statusPublished - Mar 14 2002

Fingerprint

Photoemission
Amorphous alloys
implantation
photoelectric emission
electron diffraction
valence
carbon
Valence bands
Electron diffraction
crystals
ions
Carbon
Ions
Crystals

Keywords

  • A. Disordered systems
  • A. Semiconductors
  • D. Order-disorder effects

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Photoemission studies of 74Ge+ implantation synthesized Si1-xGex amorphous alloys. / Pető, G.; Kanski, J.

In: Solid State Communications, Vol. 121, No. 11, 14.03.2002, p. 585-589.

Research output: Contribution to journalArticle

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