Photoemission spectra of ion implanted amorphous Si and Fe84B16 metal glass

G. Pető, J. Kanski

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

Ultraviolet photoemission spectra of Si and Fe84B16 were measured in amorphous and crystalline states at 10.2 eV photon energy. The surface compositions were determined by Auger electron spectroscopy. The samples were prepared by ion implantation, evaporation and by splat-cooling. The photoelectron spectra of amorphous phases are found to be different from those of the crystalline for both materials and all preparation methods. The UPS of amorphous Si and Fe84B16 metal glass have some common characteristics.

Original languageEnglish
Pages (from-to)377-381
Number of pages5
JournalSolid State Communications
Volume38
Issue number5
DOIs
Publication statusPublished - 1981

Fingerprint

Photoemission
photoelectric emission
Metals
Ions
Glass
glass
metals
Auger spectroscopy
Crystalline materials
electron spectroscopy
ion implantation
ions
photoelectrons
evaporation
Auger electron spectroscopy
Photoelectrons
cooling
Surface structure
Ion implantation
preparation

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Photoemission spectra of ion implanted amorphous Si and Fe84B16 metal glass. / Pető, G.; Kanski, J.

In: Solid State Communications, Vol. 38, No. 5, 1981, p. 377-381.

Research output: Contribution to journalArticle

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