Photo-induced defects in pure and Al-doped Bi12GeO20 single crystals

I. Földvári, L. E. Halliburton, G. J. Edwards, L. Ötsi

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

Photo-induced point defects have been compared in pure, heavily aluminum-doped, and iron-containing Bi12GeO20 single crystals. The experimental methods were thermoluminescence (TL), optical absorption, and electron spin resonance (ESR). New TL peaks were observed in the aluminum-doped crystals at 45, 65, 115, and 215 K, and the aluminum dopant was found to suppress some of the TL peaks present in the pure material. The effect of aluminum on the photorefractive process in BGO is discussed.

Original languageEnglish
Pages (from-to)181-188
Number of pages8
JournalSolid State Communications
Volume77
Issue number3
DOIs
Publication statusPublished - 1991

Fingerprint

Aluminum
doped crystals
Thermoluminescence
thermoluminescence
Single crystals
aluminum
Defects
single crystals
defects
Point defects
Light absorption
point defects
Paramagnetic resonance
electron paramagnetic resonance
optical absorption
Iron
Doping (additives)
iron
Crystals

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Photo-induced defects in pure and Al-doped Bi12GeO20 single crystals. / Földvári, I.; Halliburton, L. E.; Edwards, G. J.; Ötsi, L.

In: Solid State Communications, Vol. 77, No. 3, 1991, p. 181-188.

Research output: Contribution to journalArticle

Földvári, I. ; Halliburton, L. E. ; Edwards, G. J. ; Ötsi, L. / Photo-induced defects in pure and Al-doped Bi12GeO20 single crystals. In: Solid State Communications. 1991 ; Vol. 77, No. 3. pp. 181-188.
@article{479c4fed2fa34a39b0130fe61edf7b48,
title = "Photo-induced defects in pure and Al-doped Bi12GeO20 single crystals",
abstract = "Photo-induced point defects have been compared in pure, heavily aluminum-doped, and iron-containing Bi12GeO20 single crystals. The experimental methods were thermoluminescence (TL), optical absorption, and electron spin resonance (ESR). New TL peaks were observed in the aluminum-doped crystals at 45, 65, 115, and 215 K, and the aluminum dopant was found to suppress some of the TL peaks present in the pure material. The effect of aluminum on the photorefractive process in BGO is discussed.",
author = "I. F{\"o}ldv{\'a}ri and Halliburton, {L. E.} and Edwards, {G. J.} and L. {\"O}tsi",
year = "1991",
doi = "10.1016/0038-1098(91)90329-T",
language = "English",
volume = "77",
pages = "181--188",
journal = "Solid State Communications",
issn = "0038-1098",
publisher = "Elsevier Limited",
number = "3",

}

TY - JOUR

T1 - Photo-induced defects in pure and Al-doped Bi12GeO20 single crystals

AU - Földvári, I.

AU - Halliburton, L. E.

AU - Edwards, G. J.

AU - Ötsi, L.

PY - 1991

Y1 - 1991

N2 - Photo-induced point defects have been compared in pure, heavily aluminum-doped, and iron-containing Bi12GeO20 single crystals. The experimental methods were thermoluminescence (TL), optical absorption, and electron spin resonance (ESR). New TL peaks were observed in the aluminum-doped crystals at 45, 65, 115, and 215 K, and the aluminum dopant was found to suppress some of the TL peaks present in the pure material. The effect of aluminum on the photorefractive process in BGO is discussed.

AB - Photo-induced point defects have been compared in pure, heavily aluminum-doped, and iron-containing Bi12GeO20 single crystals. The experimental methods were thermoluminescence (TL), optical absorption, and electron spin resonance (ESR). New TL peaks were observed in the aluminum-doped crystals at 45, 65, 115, and 215 K, and the aluminum dopant was found to suppress some of the TL peaks present in the pure material. The effect of aluminum on the photorefractive process in BGO is discussed.

UR - http://www.scopus.com/inward/record.url?scp=0026054382&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0026054382&partnerID=8YFLogxK

U2 - 10.1016/0038-1098(91)90329-T

DO - 10.1016/0038-1098(91)90329-T

M3 - Article

AN - SCOPUS:0026054382

VL - 77

SP - 181

EP - 188

JO - Solid State Communications

JF - Solid State Communications

SN - 0038-1098

IS - 3

ER -