Phosphorus-related deep donor in SiC

A. Gali, P. Deák, P. Briddon

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Abstract

Two phosphorus centers in SiC, an isolated P atom substituting for Si (Formula presented) and a Si-site P-atom adjacent to a carbon vacancy (Formula presented) are investigated by first principle calculations. It is shown that (Formula presented) produces a singly occupied donor level which lies deeper than that of (Formula presented) but above the double donor level of (Formula presented) The calculated spin distribution indicates that the P-related paramagnetic resonance signals, (Formula presented) and P-V, originate from this complex.

Original languageEnglish
Pages (from-to)12602-12604
Number of pages3
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume61
Issue number19
DOIs
Publication statusPublished - Jan 1 2000

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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