Two phosphorus centers in SiC, an isolated P atom substituting for Si (Formula presented) and a Si-site P-atom adjacent to a carbon vacancy (Formula presented) are investigated by first principle calculations. It is shown that (Formula presented) produces a singly occupied donor level which lies deeper than that of (Formula presented) but above the double donor level of (Formula presented) The calculated spin distribution indicates that the P-related paramagnetic resonance signals, (Formula presented) and P-V, originate from this complex.
|Number of pages||3|
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|Publication status||Published - Jan 1 2000|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics