Phosphorus-related deep donor in SiC

A. Gali, P. Deák, P. R. Briddon, R. P. Devaty, W. J. Choyke

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

Two phosphorus centers in SiC, an isolated P atom substituting for Si (PSi) and a Si-site P-atom adjacent to a carbon vacancy (PSi+VC) are investigated by first principle calculations. It is shown that PSi+VC produces a singly occupied donor level which lies deeper than that of PSi but above the double donor level of VC. The calculated spin distribution indicates that the P-related paramagnetic resonance signals, P1,2 and P-V, originate from this complex.

Original languageEnglish
Pages (from-to)12602-12604
Number of pages3
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume61
Issue number19
Publication statusPublished - 2000

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Phosphorus
phosphorus
Atoms
paramagnetic resonance
Vacancies
Paramagnetic resonance
atoms
Carbon
carbon

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Gali, A., Deák, P., Briddon, P. R., Devaty, R. P., & Choyke, W. J. (2000). Phosphorus-related deep donor in SiC. Physical Review B - Condensed Matter and Materials Physics, 61(19), 12602-12604.

Phosphorus-related deep donor in SiC. / Gali, A.; Deák, P.; Briddon, P. R.; Devaty, R. P.; Choyke, W. J.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 61, No. 19, 2000, p. 12602-12604.

Research output: Contribution to journalArticle

Gali, A, Deák, P, Briddon, PR, Devaty, RP & Choyke, WJ 2000, 'Phosphorus-related deep donor in SiC', Physical Review B - Condensed Matter and Materials Physics, vol. 61, no. 19, pp. 12602-12604.
Gali A, Deák P, Briddon PR, Devaty RP, Choyke WJ. Phosphorus-related deep donor in SiC. Physical Review B - Condensed Matter and Materials Physics. 2000;61(19):12602-12604.
Gali, A. ; Deák, P. ; Briddon, P. R. ; Devaty, R. P. ; Choyke, W. J. / Phosphorus-related deep donor in SiC. In: Physical Review B - Condensed Matter and Materials Physics. 2000 ; Vol. 61, No. 19. pp. 12602-12604.
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