Phosphorescence from tungsten clusters during laser-assisted chemical-vapor deposition of tungsten

P. Heszler, P. Mogyorosi, J. O. Carlsson

Research output: Contribution to journalArticle

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Abstract

ArF excimer laser-induced phosphorescence from WF6/H2/M (M = Ar, Kr, Ne, Xe) Ga mixtures was investigated. The light emission originated from excited tungsten clusters. Increasing the concentrations of Xe in WF6/H2/(M+Xe) and H2 in WF6/H2/M gas mixtures, the intensity of the phosphorescence emission decreased and finally ceased. The phosphorescence lifetime dependence on the Xe and H2 partial pressures (Stern-Vollmer plots) showed that H2 quenches the phosphorescence with a quenching rate of approx.2.8 × 104 mbar-1 s-1. The spontaneous unperturbed lifetime of the phosphorescence was determined to be approx.23 μm. However, the Xe pressure had no effect on the phosphorescence lifetime, and thus it is concluded that Xe inhibits the tungsten cluster formation. The intensity dependence of phosphorescence on the WF6 partial pressure shows a relatively sharp rising part, followed by a declining part, and finally an increasing part again. The underlying mechanisms are explained. The effects of having different noble gases are compared.

Original languageEnglish
Pages (from-to)5277-5282
Number of pages6
JournalJournal of Applied Physics
Volume78
Issue number9
DOIs
Publication statusPublished - Nov 1 1995

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phosphorescence
tungsten
vapor deposition
lasers
life (durability)
partial pressure
excimer lasers
light emission
gas mixtures
rare gases
plots
quenching

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physics and Astronomy (miscellaneous)

Cite this

Phosphorescence from tungsten clusters during laser-assisted chemical-vapor deposition of tungsten. / Heszler, P.; Mogyorosi, P.; Carlsson, J. O.

In: Journal of Applied Physics, Vol. 78, No. 9, 01.11.1995, p. 5277-5282.

Research output: Contribution to journalArticle

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N2 - ArF excimer laser-induced phosphorescence from WF6/H2/M (M = Ar, Kr, Ne, Xe) Ga mixtures was investigated. The light emission originated from excited tungsten clusters. Increasing the concentrations of Xe in WF6/H2/(M+Xe) and H2 in WF6/H2/M gas mixtures, the intensity of the phosphorescence emission decreased and finally ceased. The phosphorescence lifetime dependence on the Xe and H2 partial pressures (Stern-Vollmer plots) showed that H2 quenches the phosphorescence with a quenching rate of approx.2.8 × 104 mbar-1 s-1. The spontaneous unperturbed lifetime of the phosphorescence was determined to be approx.23 μm. However, the Xe pressure had no effect on the phosphorescence lifetime, and thus it is concluded that Xe inhibits the tungsten cluster formation. The intensity dependence of phosphorescence on the WF6 partial pressure shows a relatively sharp rising part, followed by a declining part, and finally an increasing part again. The underlying mechanisms are explained. The effects of having different noble gases are compared.

AB - ArF excimer laser-induced phosphorescence from WF6/H2/M (M = Ar, Kr, Ne, Xe) Ga mixtures was investigated. The light emission originated from excited tungsten clusters. Increasing the concentrations of Xe in WF6/H2/(M+Xe) and H2 in WF6/H2/M gas mixtures, the intensity of the phosphorescence emission decreased and finally ceased. The phosphorescence lifetime dependence on the Xe and H2 partial pressures (Stern-Vollmer plots) showed that H2 quenches the phosphorescence with a quenching rate of approx.2.8 × 104 mbar-1 s-1. The spontaneous unperturbed lifetime of the phosphorescence was determined to be approx.23 μm. However, the Xe pressure had no effect on the phosphorescence lifetime, and thus it is concluded that Xe inhibits the tungsten cluster formation. The intensity dependence of phosphorescence on the WF6 partial pressure shows a relatively sharp rising part, followed by a declining part, and finally an increasing part again. The underlying mechanisms are explained. The effects of having different noble gases are compared.

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