Phase formation sequence in the Ti/InP system during thin film solid-state reactions

E. Ghegin, Ph Rodriguez, J. Lábár, M. Menyhárd, S. Favier, I. Sagnes, F. Nemouchi

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The metallurgical properties of the Ti/InP system meet a great interest for its use as a contact in the scope of various applications such as the Si Photonics. The investigations conducted on this system highlight the initiation of a reaction between the Ti and the InP substrate during the deposition process conducted at 100 °C. The simultaneous formation of two binary phases, namely, Ti2In5 and TiP, is attributed to the compositional gradient induced in the InP by the wet surface preparation and enhanced by the subsequent in situ Ar+ preclean. Once formed, the TiP layer acts as a diffusion barrier inhibiting further reaction up to 450 °C in spite of the presence of an important Ti reservoir. At higher temperature, however, i.e., from 550 °C, the reaction is enabled either by the enhancement of the species diffusion through the TiP layer or by its agglomeration. This reaction gives rise to the total consumption of the Ti2In5 and Ti while the TiP and In phases are promoted.

Original languageEnglish
Article number245311
JournalJournal of Applied Physics
Volume121
Issue number24
DOIs
Publication statusPublished - Jun 28 2017

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solid state
thin films
species diffusion
agglomeration
photonics
gradients
preparation
augmentation

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Ghegin, E., Rodriguez, P., Lábár, J., Menyhárd, M., Favier, S., Sagnes, I., & Nemouchi, F. (2017). Phase formation sequence in the Ti/InP system during thin film solid-state reactions. Journal of Applied Physics, 121(24), [245311]. https://doi.org/10.1063/1.4990427

Phase formation sequence in the Ti/InP system during thin film solid-state reactions. / Ghegin, E.; Rodriguez, Ph; Lábár, J.; Menyhárd, M.; Favier, S.; Sagnes, I.; Nemouchi, F.

In: Journal of Applied Physics, Vol. 121, No. 24, 245311, 28.06.2017.

Research output: Contribution to journalArticle

Ghegin, E, Rodriguez, P, Lábár, J, Menyhárd, M, Favier, S, Sagnes, I & Nemouchi, F 2017, 'Phase formation sequence in the Ti/InP system during thin film solid-state reactions', Journal of Applied Physics, vol. 121, no. 24, 245311. https://doi.org/10.1063/1.4990427
Ghegin, E. ; Rodriguez, Ph ; Lábár, J. ; Menyhárd, M. ; Favier, S. ; Sagnes, I. ; Nemouchi, F. / Phase formation sequence in the Ti/InP system during thin film solid-state reactions. In: Journal of Applied Physics. 2017 ; Vol. 121, No. 24.
@article{721fdc5ec36547ec9f04b3d4892410f7,
title = "Phase formation sequence in the Ti/InP system during thin film solid-state reactions",
abstract = "The metallurgical properties of the Ti/InP system meet a great interest for its use as a contact in the scope of various applications such as the Si Photonics. The investigations conducted on this system highlight the initiation of a reaction between the Ti and the InP substrate during the deposition process conducted at 100 °C. The simultaneous formation of two binary phases, namely, Ti2In5 and TiP, is attributed to the compositional gradient induced in the InP by the wet surface preparation and enhanced by the subsequent in situ Ar+ preclean. Once formed, the TiP layer acts as a diffusion barrier inhibiting further reaction up to 450 °C in spite of the presence of an important Ti reservoir. At higher temperature, however, i.e., from 550 °C, the reaction is enabled either by the enhancement of the species diffusion through the TiP layer or by its agglomeration. This reaction gives rise to the total consumption of the Ti2In5 and Ti while the TiP and In phases are promoted.",
author = "E. Ghegin and Ph Rodriguez and J. L{\'a}b{\'a}r and M. Menyh{\'a}rd and S. Favier and I. Sagnes and F. Nemouchi",
year = "2017",
month = "6",
day = "28",
doi = "10.1063/1.4990427",
language = "English",
volume = "121",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "24",

}

TY - JOUR

T1 - Phase formation sequence in the Ti/InP system during thin film solid-state reactions

AU - Ghegin, E.

AU - Rodriguez, Ph

AU - Lábár, J.

AU - Menyhárd, M.

AU - Favier, S.

AU - Sagnes, I.

AU - Nemouchi, F.

PY - 2017/6/28

Y1 - 2017/6/28

N2 - The metallurgical properties of the Ti/InP system meet a great interest for its use as a contact in the scope of various applications such as the Si Photonics. The investigations conducted on this system highlight the initiation of a reaction between the Ti and the InP substrate during the deposition process conducted at 100 °C. The simultaneous formation of two binary phases, namely, Ti2In5 and TiP, is attributed to the compositional gradient induced in the InP by the wet surface preparation and enhanced by the subsequent in situ Ar+ preclean. Once formed, the TiP layer acts as a diffusion barrier inhibiting further reaction up to 450 °C in spite of the presence of an important Ti reservoir. At higher temperature, however, i.e., from 550 °C, the reaction is enabled either by the enhancement of the species diffusion through the TiP layer or by its agglomeration. This reaction gives rise to the total consumption of the Ti2In5 and Ti while the TiP and In phases are promoted.

AB - The metallurgical properties of the Ti/InP system meet a great interest for its use as a contact in the scope of various applications such as the Si Photonics. The investigations conducted on this system highlight the initiation of a reaction between the Ti and the InP substrate during the deposition process conducted at 100 °C. The simultaneous formation of two binary phases, namely, Ti2In5 and TiP, is attributed to the compositional gradient induced in the InP by the wet surface preparation and enhanced by the subsequent in situ Ar+ preclean. Once formed, the TiP layer acts as a diffusion barrier inhibiting further reaction up to 450 °C in spite of the presence of an important Ti reservoir. At higher temperature, however, i.e., from 550 °C, the reaction is enabled either by the enhancement of the species diffusion through the TiP layer or by its agglomeration. This reaction gives rise to the total consumption of the Ti2In5 and Ti while the TiP and In phases are promoted.

UR - http://www.scopus.com/inward/record.url?scp=85021740234&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85021740234&partnerID=8YFLogxK

U2 - 10.1063/1.4990427

DO - 10.1063/1.4990427

M3 - Article

AN - SCOPUS:85021740234

VL - 121

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 24

M1 - 245311

ER -