Phase formation in the Ni/n-InP contacts for heterogeneous III/V-silicon photonic integration

E. Ghegin, F. Nemouchi, J. Lábár, C. Perrin, K. Hoummada, S. Favier, S. Gurbán, I. Sagnes

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The metallurgical properties of the Ni/n-InP system meet a great interest for its use as a contact in the scope of Photonics laser application. We report the formation of a compositionally non-uniform Ni-In-P amorphous layer during the early stages of the contacts elaboration, which include HCl and Ar+ plasma cleanings prior to the metal DC sputtering. During various heat treatments, the coexistence of the Ni2P and Ni3P binary phases and the Ni2(InP) ternary phase were observed while In release was featured. For temperatures equal to or greater than 350°C we highlighted the formation of In phase. Thanks to RTP and long-time annealing processes, we pointed out the predominance of the diffusion and/or interfacial reactions on the formation of the Ni2P, Ni3P and Ni2(InP) phases and that of nucleation or melting/solidification on the formation of In agglomerates.

Original languageEnglish
Pages (from-to)86-90
Number of pages5
JournalMicroelectronic Engineering
Volume156
DOIs
Publication statusPublished - Apr 20 2016

Fingerprint

Laser applications
Silicon
Surface chemistry
Photonics
Sputtering
Solidification
Cleaning
Melting
Nucleation
Metals
Heat treatment
photonics
Annealing
Plasmas
silicon
Temperature
laser applications
cleaning
solidification
heat treatment

Keywords

  • III-V laser
  • In grains
  • Metal/InP solid state reactions
  • Ni-InP amorphous layer

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

Cite this

Phase formation in the Ni/n-InP contacts for heterogeneous III/V-silicon photonic integration. / Ghegin, E.; Nemouchi, F.; Lábár, J.; Perrin, C.; Hoummada, K.; Favier, S.; Gurbán, S.; Sagnes, I.

In: Microelectronic Engineering, Vol. 156, 20.04.2016, p. 86-90.

Research output: Contribution to journalArticle

Ghegin, E. ; Nemouchi, F. ; Lábár, J. ; Perrin, C. ; Hoummada, K. ; Favier, S. ; Gurbán, S. ; Sagnes, I. / Phase formation in the Ni/n-InP contacts for heterogeneous III/V-silicon photonic integration. In: Microelectronic Engineering. 2016 ; Vol. 156. pp. 86-90.
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AU - Hoummada, K.

AU - Favier, S.

AU - Gurbán, S.

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