Phase change during the initial of Ni30Fe70(Invar) films on MgO(001) by DC-biased plasma-sputter-deposition

J. P. Yang, K. Makihara, H. Nakai, J. Shi, M. Hashimoto, A. Barna, P. B. Barna

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Ni100- xFex films were deposited on MgO(001) substrates at 250°C by dc plasma sputtering of the Ni30Fe70 (Invar) target at 2.5kV in pure Ar gas. A dc bias voltage Vs from 0 to -180V was applied to the substrate during deposition. The film thickness was controlled by changing the sputtering time t from 30sec to 5min. The initial growth structure and composition of the films were investigated by XPS and plan-view-TEM. The resistance R and its temperature coefficient TCR (150K to 300K) were measured as a function of t and of Vs. The Ni 1 00- xFex films where x ranges from 69±3 to 71±3 weakly dependent on Vs can be prepared. The films are initially grown in a BCC structure with NiFe(001) ∥MgO(001) and NiFe[110] ∥ MgO[100] when t is 30sec. As t reaches lmin, the FCC phase appears in the films. When t increases beyond 2 min, the films retain mainly the FCC-NiFe structure with NiFe(001) ∥MgO(001) and NiFe[100] ∥ MgO[100]. The films are not electrically continuous unless t reaches 2 min, 1 min, and 30 sec at Vs=0V, -120 V and -180 V, respectively . R decreases with an increase in t and in Vs, while TCR changes consistently with the change of R.

Original languageEnglish
Pages (from-to)347-350
Number of pages4
JournalMaterials Science Forum
Volume287-288
Publication statusPublished - Dec 1 1998

Keywords

  • Electrical Resistance
  • Electron Microscopy
  • Epitaxial Growth
  • Invar
  • MgO(001)
  • Plasma Sputtering

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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