Performance on test beam of the L3 double-sided silicon microstrip detector

A. Adam, O. Adriani, S. Ahlen, G. Ambrosi, E. Babucci, A. Baschirotto, R. Battiston, A. Bay, G. Bencze, B. Bertucci, M. Biasini, G. M. Bilei, G. J. Bobbink, M. Bosetti, M. L. Brooks, J. Busenitz, W. J. Burger, C. Camps, M. Caria, G. Castellini & 55 others B. Checcucci, A. Chen, T. E. Coan, V. Commichau, D. DiBitonto, P. Duinker, S. Easo, P. Extermann, E. Fiandrini, A. Gougas, K. Hangarter, C. Hauviller, A. Herve, G. Hu, I. Josa, J. S. Kapustinski, D. Kim, W. W. Kinnison, V. R. Krastev, G. Landi, M. Lebeau, P. Lecomte, D. M. Lee, R. Leiste, W. T. Lin, W. Lohmann, A. Marin, R. Massetti, G. B. Mills, H. Nowak, G. Passaleva, T. Paul, M. Pauluzzi, S. Pensotti, E. Perrin, P. G. Rancoita, M. Rattaggi, A. Rosch, A. Santocchia, M. Sachwitz, P. Schmitz, B. Schöneich, L. Servoli, G. Susinno, G. Terzi, F. Tonisch, J. Toth, G. Trowitzsch, G. M. Viertel, H. Vogt, S. Waldmeier, J. Wegmann, R. Weill, S. C. Yeh, B. Zhou

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Two modules of the L3 Silicon Microvertex Detector (SMD) have been tested on beam. The active area of the modules consists of double sided silicon microstrip detectors; the implantation pitch is 25 μm and 50 μm in the junction and ohmic side, respectively. The detectors are read out by a VLSI radiation hard amplifier (SVX-H). The position resolution, with a readout pitch of 50 μm and 200 μm for the two sides, is determined to be 7.0 μm and 14.3 μm. A signal to noise ratio ≥ 16 and a detection efficiency ≥ 99% are measured for both sides.

Original languageEnglish
Pages (from-to)436-439
Number of pages4
JournalNuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume348
Issue number2-3
DOIs
Publication statusPublished - Sep 1 1994

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Detectors
Silicon
Silicon detectors
detectors
silicon
modules
Signal to noise ratio
very large scale integration
Radiation
readout
implantation
signal to noise ratios
amplifiers
radiation

ASJC Scopus subject areas

  • Instrumentation
  • Nuclear and High Energy Physics

Cite this

Performance on test beam of the L3 double-sided silicon microstrip detector. / Adam, A.; Adriani, O.; Ahlen, S.; Ambrosi, G.; Babucci, E.; Baschirotto, A.; Battiston, R.; Bay, A.; Bencze, G.; Bertucci, B.; Biasini, M.; Bilei, G. M.; Bobbink, G. J.; Bosetti, M.; Brooks, M. L.; Busenitz, J.; Burger, W. J.; Camps, C.; Caria, M.; Castellini, G.; Checcucci, B.; Chen, A.; Coan, T. E.; Commichau, V.; DiBitonto, D.; Duinker, P.; Easo, S.; Extermann, P.; Fiandrini, E.; Gougas, A.; Hangarter, K.; Hauviller, C.; Herve, A.; Hu, G.; Josa, I.; Kapustinski, J. S.; Kim, D.; Kinnison, W. W.; Krastev, V. R.; Landi, G.; Lebeau, M.; Lecomte, P.; Lee, D. M.; Leiste, R.; Lin, W. T.; Lohmann, W.; Marin, A.; Massetti, R.; Mills, G. B.; Nowak, H.; Passaleva, G.; Paul, T.; Pauluzzi, M.; Pensotti, S.; Perrin, E.; Rancoita, P. G.; Rattaggi, M.; Rosch, A.; Santocchia, A.; Sachwitz, M.; Schmitz, P.; Schöneich, B.; Servoli, L.; Susinno, G.; Terzi, G.; Tonisch, F.; Toth, J.; Trowitzsch, G.; Viertel, G. M.; Vogt, H.; Waldmeier, S.; Wegmann, J.; Weill, R.; Yeh, S. C.; Zhou, B.

In: Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 348, No. 2-3, 01.09.1994, p. 436-439.

Research output: Contribution to journalArticle

Adam, A, Adriani, O, Ahlen, S, Ambrosi, G, Babucci, E, Baschirotto, A, Battiston, R, Bay, A, Bencze, G, Bertucci, B, Biasini, M, Bilei, GM, Bobbink, GJ, Bosetti, M, Brooks, ML, Busenitz, J, Burger, WJ, Camps, C, Caria, M, Castellini, G, Checcucci, B, Chen, A, Coan, TE, Commichau, V, DiBitonto, D, Duinker, P, Easo, S, Extermann, P, Fiandrini, E, Gougas, A, Hangarter, K, Hauviller, C, Herve, A, Hu, G, Josa, I, Kapustinski, JS, Kim, D, Kinnison, WW, Krastev, VR, Landi, G, Lebeau, M, Lecomte, P, Lee, DM, Leiste, R, Lin, WT, Lohmann, W, Marin, A, Massetti, R, Mills, GB, Nowak, H, Passaleva, G, Paul, T, Pauluzzi, M, Pensotti, S, Perrin, E, Rancoita, PG, Rattaggi, M, Rosch, A, Santocchia, A, Sachwitz, M, Schmitz, P, Schöneich, B, Servoli, L, Susinno, G, Terzi, G, Tonisch, F, Toth, J, Trowitzsch, G, Viertel, GM, Vogt, H, Waldmeier, S, Wegmann, J, Weill, R, Yeh, SC & Zhou, B 1994, 'Performance on test beam of the L3 double-sided silicon microstrip detector', Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, vol. 348, no. 2-3, pp. 436-439. https://doi.org/10.1016/0168-9002(94)90775-7
Adam, A. ; Adriani, O. ; Ahlen, S. ; Ambrosi, G. ; Babucci, E. ; Baschirotto, A. ; Battiston, R. ; Bay, A. ; Bencze, G. ; Bertucci, B. ; Biasini, M. ; Bilei, G. M. ; Bobbink, G. J. ; Bosetti, M. ; Brooks, M. L. ; Busenitz, J. ; Burger, W. J. ; Camps, C. ; Caria, M. ; Castellini, G. ; Checcucci, B. ; Chen, A. ; Coan, T. E. ; Commichau, V. ; DiBitonto, D. ; Duinker, P. ; Easo, S. ; Extermann, P. ; Fiandrini, E. ; Gougas, A. ; Hangarter, K. ; Hauviller, C. ; Herve, A. ; Hu, G. ; Josa, I. ; Kapustinski, J. S. ; Kim, D. ; Kinnison, W. W. ; Krastev, V. R. ; Landi, G. ; Lebeau, M. ; Lecomte, P. ; Lee, D. M. ; Leiste, R. ; Lin, W. T. ; Lohmann, W. ; Marin, A. ; Massetti, R. ; Mills, G. B. ; Nowak, H. ; Passaleva, G. ; Paul, T. ; Pauluzzi, M. ; Pensotti, S. ; Perrin, E. ; Rancoita, P. G. ; Rattaggi, M. ; Rosch, A. ; Santocchia, A. ; Sachwitz, M. ; Schmitz, P. ; Schöneich, B. ; Servoli, L. ; Susinno, G. ; Terzi, G. ; Tonisch, F. ; Toth, J. ; Trowitzsch, G. ; Viertel, G. M. ; Vogt, H. ; Waldmeier, S. ; Wegmann, J. ; Weill, R. ; Yeh, S. C. ; Zhou, B. / Performance on test beam of the L3 double-sided silicon microstrip detector. In: Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 1994 ; Vol. 348, No. 2-3. pp. 436-439.
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abstract = "Two modules of the L3 Silicon Microvertex Detector (SMD) have been tested on beam. The active area of the modules consists of double sided silicon microstrip detectors; the implantation pitch is 25 μm and 50 μm in the junction and ohmic side, respectively. The detectors are read out by a VLSI radiation hard amplifier (SVX-H). The position resolution, with a readout pitch of 50 μm and 200 μm for the two sides, is determined to be 7.0 μm and 14.3 μm. A signal to noise ratio ≥ 16 and a detection efficiency ≥ 99{\%} are measured for both sides.",
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T1 - Performance on test beam of the L3 double-sided silicon microstrip detector

AU - Adam, A.

AU - Adriani, O.

AU - Ahlen, S.

AU - Ambrosi, G.

AU - Babucci, E.

AU - Baschirotto, A.

AU - Battiston, R.

AU - Bay, A.

AU - Bencze, G.

AU - Bertucci, B.

AU - Biasini, M.

AU - Bilei, G. M.

AU - Bobbink, G. J.

AU - Bosetti, M.

AU - Brooks, M. L.

AU - Busenitz, J.

AU - Burger, W. J.

AU - Camps, C.

AU - Caria, M.

AU - Castellini, G.

AU - Checcucci, B.

AU - Chen, A.

AU - Coan, T. E.

AU - Commichau, V.

AU - DiBitonto, D.

AU - Duinker, P.

AU - Easo, S.

AU - Extermann, P.

AU - Fiandrini, E.

AU - Gougas, A.

AU - Hangarter, K.

AU - Hauviller, C.

AU - Herve, A.

AU - Hu, G.

AU - Josa, I.

AU - Kapustinski, J. S.

AU - Kim, D.

AU - Kinnison, W. W.

AU - Krastev, V. R.

AU - Landi, G.

AU - Lebeau, M.

AU - Lecomte, P.

AU - Lee, D. M.

AU - Leiste, R.

AU - Lin, W. T.

AU - Lohmann, W.

AU - Marin, A.

AU - Massetti, R.

AU - Mills, G. B.

AU - Nowak, H.

AU - Passaleva, G.

AU - Paul, T.

AU - Pauluzzi, M.

AU - Pensotti, S.

AU - Perrin, E.

AU - Rancoita, P. G.

AU - Rattaggi, M.

AU - Rosch, A.

AU - Santocchia, A.

AU - Sachwitz, M.

AU - Schmitz, P.

AU - Schöneich, B.

AU - Servoli, L.

AU - Susinno, G.

AU - Terzi, G.

AU - Tonisch, F.

AU - Toth, J.

AU - Trowitzsch, G.

AU - Viertel, G. M.

AU - Vogt, H.

AU - Waldmeier, S.

AU - Wegmann, J.

AU - Weill, R.

AU - Yeh, S. C.

AU - Zhou, B.

PY - 1994/9/1

Y1 - 1994/9/1

N2 - Two modules of the L3 Silicon Microvertex Detector (SMD) have been tested on beam. The active area of the modules consists of double sided silicon microstrip detectors; the implantation pitch is 25 μm and 50 μm in the junction and ohmic side, respectively. The detectors are read out by a VLSI radiation hard amplifier (SVX-H). The position resolution, with a readout pitch of 50 μm and 200 μm for the two sides, is determined to be 7.0 μm and 14.3 μm. A signal to noise ratio ≥ 16 and a detection efficiency ≥ 99% are measured for both sides.

AB - Two modules of the L3 Silicon Microvertex Detector (SMD) have been tested on beam. The active area of the modules consists of double sided silicon microstrip detectors; the implantation pitch is 25 μm and 50 μm in the junction and ohmic side, respectively. The detectors are read out by a VLSI radiation hard amplifier (SVX-H). The position resolution, with a readout pitch of 50 μm and 200 μm for the two sides, is determined to be 7.0 μm and 14.3 μm. A signal to noise ratio ≥ 16 and a detection efficiency ≥ 99% are measured for both sides.

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U2 - 10.1016/0168-9002(94)90775-7

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M3 - Article

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EP - 439

JO - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

JF - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

SN - 0168-9002

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