Pattern formation in SiSb system

A. Csík, G. Erdélyi, G. Langer, L. Daróczi, D. Beke, J. Nyéki, Z. Erdélyi

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Thermal annealing of Si/Si 1-xSb x/Si amorphous thin-film tri-layer samples (x=18 and 24 at%Sb) under 100 bar Ar pressure results in an interesting pattern formation. In pictures, taken by means of cross-sectional transmission electron microscopy, stripe-shaped contrast, with three maxima, parallel to the interfaces can be seen. Secondary neutral mass spectrometer measurements revealed that the regions with different contrasts correspond to Sb-rich and Sb-depleted regions. Furthermore, the Sb concentration peaks in the Sb-rich regions, especially at longer annealing times, are different: the peak developed at the Si/SiSb interface closer to the free surface decays faster than that of the inner one closer to the substrate. The pattern formation is interpreted by segregation-initiated spinodal-like decomposition, while the difference of the Sb concentration peaks is explained by the resultant Sb transport to and evaporation from the free surface. The possible role of formation of nanocrystalline grains, in the explanation of the fast transport under pressure as compared to vacuum is also discussed.

Original languageEnglish
Pages (from-to)168-173
Number of pages6
JournalVacuum
Volume80
Issue number1-3
DOIs
Publication statusPublished - Oct 14 2005

Fingerprint

Annealing
Mass spectrometers
Amorphous films
Evaporation
annealing
Vacuum
Transmission electron microscopy
Decomposition
Thin films
mass spectrometers
Substrates
evaporation
decomposition
vacuum
transmission electron microscopy
decay
thin films
Hot Temperature

Keywords

  • Amorphous SiSb alloy
  • Crystallization
  • Decomposition
  • Segregation

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Pattern formation in SiSb system. / Csík, A.; Erdélyi, G.; Langer, G.; Daróczi, L.; Beke, D.; Nyéki, J.; Erdélyi, Z.

In: Vacuum, Vol. 80, No. 1-3, 14.10.2005, p. 168-173.

Research output: Contribution to journalArticle

Csík, A. ; Erdélyi, G. ; Langer, G. ; Daróczi, L. ; Beke, D. ; Nyéki, J. ; Erdélyi, Z. / Pattern formation in SiSb system. In: Vacuum. 2005 ; Vol. 80, No. 1-3. pp. 168-173.
@article{3326e724d3b5456395525b3bf202b010,
title = "Pattern formation in SiSb system",
abstract = "Thermal annealing of Si/Si 1-xSb x/Si amorphous thin-film tri-layer samples (x=18 and 24 at{\%}Sb) under 100 bar Ar pressure results in an interesting pattern formation. In pictures, taken by means of cross-sectional transmission electron microscopy, stripe-shaped contrast, with three maxima, parallel to the interfaces can be seen. Secondary neutral mass spectrometer measurements revealed that the regions with different contrasts correspond to Sb-rich and Sb-depleted regions. Furthermore, the Sb concentration peaks in the Sb-rich regions, especially at longer annealing times, are different: the peak developed at the Si/SiSb interface closer to the free surface decays faster than that of the inner one closer to the substrate. The pattern formation is interpreted by segregation-initiated spinodal-like decomposition, while the difference of the Sb concentration peaks is explained by the resultant Sb transport to and evaporation from the free surface. The possible role of formation of nanocrystalline grains, in the explanation of the fast transport under pressure as compared to vacuum is also discussed.",
keywords = "Amorphous SiSb alloy, Crystallization, Decomposition, Segregation",
author = "A. Cs{\'i}k and G. Erd{\'e}lyi and G. Langer and L. Dar{\'o}czi and D. Beke and J. Ny{\'e}ki and Z. Erd{\'e}lyi",
year = "2005",
month = "10",
day = "14",
doi = "10.1016/j.vacuum.2005.08.014",
language = "English",
volume = "80",
pages = "168--173",
journal = "Vacuum",
issn = "0042-207X",
publisher = "Elsevier Limited",
number = "1-3",

}

TY - JOUR

T1 - Pattern formation in SiSb system

AU - Csík, A.

AU - Erdélyi, G.

AU - Langer, G.

AU - Daróczi, L.

AU - Beke, D.

AU - Nyéki, J.

AU - Erdélyi, Z.

PY - 2005/10/14

Y1 - 2005/10/14

N2 - Thermal annealing of Si/Si 1-xSb x/Si amorphous thin-film tri-layer samples (x=18 and 24 at%Sb) under 100 bar Ar pressure results in an interesting pattern formation. In pictures, taken by means of cross-sectional transmission electron microscopy, stripe-shaped contrast, with three maxima, parallel to the interfaces can be seen. Secondary neutral mass spectrometer measurements revealed that the regions with different contrasts correspond to Sb-rich and Sb-depleted regions. Furthermore, the Sb concentration peaks in the Sb-rich regions, especially at longer annealing times, are different: the peak developed at the Si/SiSb interface closer to the free surface decays faster than that of the inner one closer to the substrate. The pattern formation is interpreted by segregation-initiated spinodal-like decomposition, while the difference of the Sb concentration peaks is explained by the resultant Sb transport to and evaporation from the free surface. The possible role of formation of nanocrystalline grains, in the explanation of the fast transport under pressure as compared to vacuum is also discussed.

AB - Thermal annealing of Si/Si 1-xSb x/Si amorphous thin-film tri-layer samples (x=18 and 24 at%Sb) under 100 bar Ar pressure results in an interesting pattern formation. In pictures, taken by means of cross-sectional transmission electron microscopy, stripe-shaped contrast, with three maxima, parallel to the interfaces can be seen. Secondary neutral mass spectrometer measurements revealed that the regions with different contrasts correspond to Sb-rich and Sb-depleted regions. Furthermore, the Sb concentration peaks in the Sb-rich regions, especially at longer annealing times, are different: the peak developed at the Si/SiSb interface closer to the free surface decays faster than that of the inner one closer to the substrate. The pattern formation is interpreted by segregation-initiated spinodal-like decomposition, while the difference of the Sb concentration peaks is explained by the resultant Sb transport to and evaporation from the free surface. The possible role of formation of nanocrystalline grains, in the explanation of the fast transport under pressure as compared to vacuum is also discussed.

KW - Amorphous SiSb alloy

KW - Crystallization

KW - Decomposition

KW - Segregation

UR - http://www.scopus.com/inward/record.url?scp=25644446793&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=25644446793&partnerID=8YFLogxK

U2 - 10.1016/j.vacuum.2005.08.014

DO - 10.1016/j.vacuum.2005.08.014

M3 - Article

VL - 80

SP - 168

EP - 173

JO - Vacuum

JF - Vacuum

SN - 0042-207X

IS - 1-3

ER -