Passivation of p-type dopants in 4H-SiC by hydrogen

B. Aradi, A. Gali, P. Deák, N. T. Son, E. Janzén

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

Experimental investigations showed passivation of the p-type dopants B and Al in 4H-SiC by the formation of B+H and Al+H complexes. The dissociation energies of these complexes differed by 0.9 eV. Ab initio supercell calculations have been performed to investigate the interaction of H with B and Al in hexagonal 4H-SiC. The total energy, geometry and electronic structure of the possible complexes have been determined. Site dependencies have also been investigated. The most stable configurations were found with H at a bond center site next to B at the Si site, and with H at the antibonding site of a carbon atom which is first neighbor to Al at a Si site. Both the BSi+HBC and the AlSi+HAB(C) complexes turned out to be electrically inactive. The different structure of the passivated complexes explains the observed difference in their dissociation energy: the calculated difference of the binding energies of these complexes is 0.9 eV, which agrees well with the experimental finding.

Original languageEnglish
Pages (from-to)722-725
Number of pages4
JournalPhysica B: Condensed Matter
Volume308-310
DOIs
Publication statusPublished - Dec 1 2001

Keywords

  • Aluminum
  • Boron
  • Hydrogen
  • Passivation
  • SiC

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Passivation of p-type dopants in 4H-SiC by hydrogen'. Together they form a unique fingerprint.

  • Cite this