Passivation of GaAs(001) surface by the growth of high quality c-GaN ultra-thin film using low power glow discharge nitrogen plasma source

G. Monier, L. Bideux, C. Robert-Goumet, B. Gruzza, M. Petit, J. Lábár, M. Menyhárd

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

The benefits of using a low power glow discharge nitrogen plasma source to create high quality GaN layers on GaAs(001) surface are first highlighted. This uncommon type of plasma source has the particularity of working at a low power (3-10 W) and a low pressure (10 - 1 Pa) which induce creation of a small quantity of active nitrogen species. We put in evidence that this distinctiveness allows the growth of a stoichiometric and As-free GaN ultra-thin film on a GaAs(001) substrate by the mean of the inter-diffusion of As and N atoms. XPS, EELS, AFM are used to monitor surface composition and structure changes and to estimate the GaN thickness. A near saturation of the nitride layer thickness versus plasma exposure time is found. Furthermore, the possibility to crystallize the amorphous GaN layer by an annealing at 620°C in a cubic structure with a lattice parameter close to that of c-GaN is put in evidence by means of TEM and LEED measurements. These measurements also show the homogeneity of the GaN thickness. In addition, the passivating effect of the GaN ultra-thin film to protect the GaAs surface is proved with the monitoring by XPS of the surface oxidation during several days of air exposure.

Original languageEnglish
Pages (from-to)1093-1099
Number of pages7
JournalSurface Science
Volume606
Issue number13-14
DOIs
Publication statusPublished - Jul 2012

Fingerprint

Nitrogen plasma
nitrogen plasma
Plasma sources
Ultrathin films
Glow discharges
Passivation
glow discharges
passivity
Surface structure
X ray photoelectron spectroscopy
thin films
Electron energy loss spectroscopy
Nitrides
Lattice constants
Nitrogen
Annealing
Transmission electron microscopy
homogeneity
nitrides
Plasmas

Keywords

  • AFM
  • Cubic GaN
  • GaAs
  • GDS plasma source
  • Nitridation
  • TEM
  • XPS

ASJC Scopus subject areas

  • Surfaces and Interfaces
  • Condensed Matter Physics
  • Materials Chemistry
  • Surfaces, Coatings and Films

Cite this

Passivation of GaAs(001) surface by the growth of high quality c-GaN ultra-thin film using low power glow discharge nitrogen plasma source. / Monier, G.; Bideux, L.; Robert-Goumet, C.; Gruzza, B.; Petit, M.; Lábár, J.; Menyhárd, M.

In: Surface Science, Vol. 606, No. 13-14, 07.2012, p. 1093-1099.

Research output: Contribution to journalArticle

@article{a548bd50b92445e794e0b4430d84b6ec,
title = "Passivation of GaAs(001) surface by the growth of high quality c-GaN ultra-thin film using low power glow discharge nitrogen plasma source",
abstract = "The benefits of using a low power glow discharge nitrogen plasma source to create high quality GaN layers on GaAs(001) surface are first highlighted. This uncommon type of plasma source has the particularity of working at a low power (3-10 W) and a low pressure (10 - 1 Pa) which induce creation of a small quantity of active nitrogen species. We put in evidence that this distinctiveness allows the growth of a stoichiometric and As-free GaN ultra-thin film on a GaAs(001) substrate by the mean of the inter-diffusion of As and N atoms. XPS, EELS, AFM are used to monitor surface composition and structure changes and to estimate the GaN thickness. A near saturation of the nitride layer thickness versus plasma exposure time is found. Furthermore, the possibility to crystallize the amorphous GaN layer by an annealing at 620°C in a cubic structure with a lattice parameter close to that of c-GaN is put in evidence by means of TEM and LEED measurements. These measurements also show the homogeneity of the GaN thickness. In addition, the passivating effect of the GaN ultra-thin film to protect the GaAs surface is proved with the monitoring by XPS of the surface oxidation during several days of air exposure.",
keywords = "AFM, Cubic GaN, GaAs, GDS plasma source, Nitridation, TEM, XPS",
author = "G. Monier and L. Bideux and C. Robert-Goumet and B. Gruzza and M. Petit and J. L{\'a}b{\'a}r and M. Menyh{\'a}rd",
year = "2012",
month = "7",
doi = "10.1016/j.susc.2012.03.006",
language = "English",
volume = "606",
pages = "1093--1099",
journal = "Surface Science",
issn = "0039-6028",
publisher = "Elsevier",
number = "13-14",

}

TY - JOUR

T1 - Passivation of GaAs(001) surface by the growth of high quality c-GaN ultra-thin film using low power glow discharge nitrogen plasma source

AU - Monier, G.

AU - Bideux, L.

AU - Robert-Goumet, C.

AU - Gruzza, B.

AU - Petit, M.

AU - Lábár, J.

AU - Menyhárd, M.

PY - 2012/7

Y1 - 2012/7

N2 - The benefits of using a low power glow discharge nitrogen plasma source to create high quality GaN layers on GaAs(001) surface are first highlighted. This uncommon type of plasma source has the particularity of working at a low power (3-10 W) and a low pressure (10 - 1 Pa) which induce creation of a small quantity of active nitrogen species. We put in evidence that this distinctiveness allows the growth of a stoichiometric and As-free GaN ultra-thin film on a GaAs(001) substrate by the mean of the inter-diffusion of As and N atoms. XPS, EELS, AFM are used to monitor surface composition and structure changes and to estimate the GaN thickness. A near saturation of the nitride layer thickness versus plasma exposure time is found. Furthermore, the possibility to crystallize the amorphous GaN layer by an annealing at 620°C in a cubic structure with a lattice parameter close to that of c-GaN is put in evidence by means of TEM and LEED measurements. These measurements also show the homogeneity of the GaN thickness. In addition, the passivating effect of the GaN ultra-thin film to protect the GaAs surface is proved with the monitoring by XPS of the surface oxidation during several days of air exposure.

AB - The benefits of using a low power glow discharge nitrogen plasma source to create high quality GaN layers on GaAs(001) surface are first highlighted. This uncommon type of plasma source has the particularity of working at a low power (3-10 W) and a low pressure (10 - 1 Pa) which induce creation of a small quantity of active nitrogen species. We put in evidence that this distinctiveness allows the growth of a stoichiometric and As-free GaN ultra-thin film on a GaAs(001) substrate by the mean of the inter-diffusion of As and N atoms. XPS, EELS, AFM are used to monitor surface composition and structure changes and to estimate the GaN thickness. A near saturation of the nitride layer thickness versus plasma exposure time is found. Furthermore, the possibility to crystallize the amorphous GaN layer by an annealing at 620°C in a cubic structure with a lattice parameter close to that of c-GaN is put in evidence by means of TEM and LEED measurements. These measurements also show the homogeneity of the GaN thickness. In addition, the passivating effect of the GaN ultra-thin film to protect the GaAs surface is proved with the monitoring by XPS of the surface oxidation during several days of air exposure.

KW - AFM

KW - Cubic GaN

KW - GaAs

KW - GDS plasma source

KW - Nitridation

KW - TEM

KW - XPS

UR - http://www.scopus.com/inward/record.url?scp=84860726172&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84860726172&partnerID=8YFLogxK

U2 - 10.1016/j.susc.2012.03.006

DO - 10.1016/j.susc.2012.03.006

M3 - Article

AN - SCOPUS:84860726172

VL - 606

SP - 1093

EP - 1099

JO - Surface Science

JF - Surface Science

SN - 0039-6028

IS - 13-14

ER -