Passivation of Al/Si interface by chemical treatment: Schottky barrier height and plasma etch induced defects

Z. J. Horváth, M. Adám, P. Godio, G. Borionetti, I. Szabó, E. Gombia, V. Van Tuyen

Research output: Contribution to journalConference article

11 Citations (Scopus)


The influence of different chemical treatment on the electrical behaviour of n- and p-type Al/Si Schottky junctions was studied. A Schottky barrier height of 0.91 eV was achieved due probably to the unpinning of the Fermi-level at the Al/Si interface. This is one of the highest barrier height values reported so far for a solid-state Schottky junction prepared to p-Si. A doping level reduction was observed in the vicinity of Si surface for wafers with native oxide and for those annealed in forming gas. It was observed unexpectedly that the reactive plasma etch used for formation of mesa structures, decreases the apparent Schottky barrier height.

Original languageEnglish
Pages (from-to)255-258
Number of pages4
JournalSolid State Phenomena
Publication statusPublished - Jan 1 2002
EventGettering and Defect Engineering in Semiconductor Technology 2001 - S. Tecla, Italy
Duration: Sep 30 2001Oct 3 2001



  • Chemical treatment
  • Interface modification
  • Ohmic contacts
  • Schottky barrier
  • Silicon
  • Surface passivation

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Materials Science(all)
  • Condensed Matter Physics

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