Oxygen isotopic exchange occurring during dry thermal oxidation of 6H SiC

I. C. Vickridge, D. Tromson, I. Trimaille, J. J. Ganem, E. Szilágyi, G. Battistig

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

SiC is a large band gap semiconductor, promising for high power and high frequency devices. The thermal oxide is SiO2 however the growth rates of thermal oxide on SiC are substantially slower than on Si, and different along the polar directions (〈0 0 0 1〉 and 〈0 0 0 1〉 in the hexagonal polytypes). Thorough understanding of the oxide growth mechanisms may give us new insights into the nature of the SiO2/SiC interface, crucial for device applications. We have determined growth kinetics for ultra-dry thermal oxidation of 6H SiC at 1100 °C for pressures from 3 to 200 mbar. At 3 mbar, the lowest pressure studied, the oxide growth rates along the two polar directions are virtually the same. At higher pressures growth is faster on the carbon-terminated (0 0 0 1̄) face. After consecutive oxidations at 1100 °C and 100 mbar in 18O2 and 16O2 gases, 18O depth profiles show significant isotopic exchange and oxygen movement within the oxide during oxidation.

Original languageEnglish
Pages (from-to)574-578
Number of pages5
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume190
Issue number1-4
DOIs
Publication statusPublished - May 1 2002

Keywords

  • Isotopic tracing
  • Oxidation mechanisms
  • Silicon carbide

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

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