Oxydation thermique de 6H SiC (0001) et (0001̄) en O2 ultra-pur: une etude par tracage avec isotopes stables

I. C. Vickridge, J. J. Ganem, I. Trimaille, G. Battistig, E. Szilágyi

Research output: Contribution to journalArticle


The oxidation mechanisms of 6H SiC in ultra-dry O2 have been studied on the (0001) face (`carbon-terminated') and the 0001̄) face (`silicon-terminated') by using isotopically labelled O2 gases and nuclear reaction analysis via the 180(p,α)15N reaction. The pressure range 3-200 mb and durations of 30 minutes to 45 hours were investigated, and compared to the oxidation of Si(100) under identical conditions. As is the case for silicon, we show the formation of a layer of SiO2. Treatments in which oxidation is performed alternately under 16O2 and 18O2, coupled with measurements of 18O depth profiles, show the formation of new oxide near the SiO2/SiC interface. The isotopic composition of the oxide formed near the interface is different from that of the gas utilized, suggesting the presence of isotopic exchange phenomena or exotic growth processes such as injection of silicon atoms from the SiC into the existing oxide.

Original languageEnglish
Pages (from-to)4/298
JournalVide: Science, Technique et Applications
Publication statusPublished - Dec 1 2000

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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