The oxidation behaviour of GdSi2 prepared in UHV conditions was investigated both in dry and wet ambient. During dry oxidation the silicide bonds were found to break up and a layer of Gd2O3 · 2SiO2 compound was obtained. For wet ambient a temperature dependence was found. At 500°C the composition of the oxidized layer was the same as that for dry processing. At 800°C, however, more silicon atoms were oxidized and the layer composition was Gd2O3 · 4SiO2. This oxidation behaviour results in a serious limitation in technical application of GdSi2.
ASJC Scopus subject areas
- Nuclear and High Energy Physics