Oxidation behaviour of GdSi2 studied by RBS

H. V. Suu, G. Mezey, G. Petö, F. Pászti, E. Kótai, A. Manuaba, M. Fried, J. Gyulai

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The oxidation behaviour of GdSi2 prepared in UHV conditions was investigated both in dry and wet ambient. During dry oxidation the silicide bonds were found to break up and a layer of Gd2O3 · 2SiO2 compound was obtained. For wet ambient a temperature dependence was found. At 500°C the composition of the oxidized layer was the same as that for dry processing. At 800°C, however, more silicon atoms were oxidized and the layer composition was Gd2O3 · 4SiO2. This oxidation behaviour results in a serious limitation in technical application of GdSi2.

Original languageEnglish
Pages (from-to)247-249
Number of pages3
JournalNuclear Inst. and Methods in Physics Research, B
Volume15
Issue number1-6
DOIs
Publication statusPublished - Apr 1 1986

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

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