Outlook for Nanoelectronic Devices

An Chen, James Hutchby, Victor V. Zhirnov, George Bourianoff

Research output: Chapter in Book/Report/Conference proceedingChapter

1 Citation (Scopus)

Abstract

This chapter reviews recent benchmark results of emerging nanoelectronic devices. Key observations and perspectives from these assessments are discussed. Quantitative benchmark approaches evaluate emerging devices in combinational logic gates (e.g., inverter, NAND-gate, and adder). A survey-based critical assessment has been utilized by the ITRS Emerging Research Device (ERD) group to evaluate emerging devices based on a set of technological and architectural criteria. Key results of both the quantitative benchmark and the critical assessment are summarized in this chapter. A retrospective assessment of emerging devices tracked by the ITRS ERD chapter is provided.

Original languageEnglish
Title of host publicationEmerging Nanoelectronic Devices
PublisherWiley Blackwell
Pages511-528
Number of pages18
Volume9781118447741
ISBN (Electronic)9781118958254
ISBN (Print)9781118447741
DOIs
Publication statusPublished - Jan 27 2015

    Fingerprint

Keywords

  • Benchmark
  • Critical assessment
  • Emerging research device (ERD)
  • Outlook

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Chen, A., Hutchby, J., Zhirnov, V. V., & Bourianoff, G. (2015). Outlook for Nanoelectronic Devices. In Emerging Nanoelectronic Devices (Vol. 9781118447741, pp. 511-528). Wiley Blackwell. https://doi.org/10.1002/9781118958254.ch26