Outdiffusion through silicon oxide and silicon nitride layers on gallium arsenide

J. Gyulai, J. W. Mayer, I. V. Mitchell, V. Rodriguez

Research output: Contribution to journalArticle

103 Citations (Scopus)

Abstract

Backscattering of MeV 4He ions has been used to analyze the Ga and As content in SiO2 and Si3N4 dielectric layers deposited on single-crystal GaAs substrates. Changes in impurity concentrations and distributions are seen after isothermal annealing at both 750 and 800°C. Evidence for Ga outdiffusion is clear.

Original languageEnglish
Pages (from-to)332-334
Number of pages3
JournalApplied Physics Letters
Volume17
Issue number8
DOIs
Publication statusPublished - 1970

Fingerprint

silicon oxides
silicon nitrides
gallium
nitrides
backscattering
impurities
annealing
single crystals
ions

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Outdiffusion through silicon oxide and silicon nitride layers on gallium arsenide. / Gyulai, J.; Mayer, J. W.; Mitchell, I. V.; Rodriguez, V.

In: Applied Physics Letters, Vol. 17, No. 8, 1970, p. 332-334.

Research output: Contribution to journalArticle

Gyulai, J. ; Mayer, J. W. ; Mitchell, I. V. ; Rodriguez, V. / Outdiffusion through silicon oxide and silicon nitride layers on gallium arsenide. In: Applied Physics Letters. 1970 ; Vol. 17, No. 8. pp. 332-334.
@article{e2538d4558914ec1ac6e2cf966a078e2,
title = "Outdiffusion through silicon oxide and silicon nitride layers on gallium arsenide",
abstract = "Backscattering of MeV 4He ions has been used to analyze the Ga and As content in SiO2 and Si3N4 dielectric layers deposited on single-crystal GaAs substrates. Changes in impurity concentrations and distributions are seen after isothermal annealing at both 750 and 800°C. Evidence for Ga outdiffusion is clear.",
author = "J. Gyulai and Mayer, {J. W.} and Mitchell, {I. V.} and V. Rodriguez",
year = "1970",
doi = "10.1063/1.1653422",
language = "English",
volume = "17",
pages = "332--334",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "8",

}

TY - JOUR

T1 - Outdiffusion through silicon oxide and silicon nitride layers on gallium arsenide

AU - Gyulai, J.

AU - Mayer, J. W.

AU - Mitchell, I. V.

AU - Rodriguez, V.

PY - 1970

Y1 - 1970

N2 - Backscattering of MeV 4He ions has been used to analyze the Ga and As content in SiO2 and Si3N4 dielectric layers deposited on single-crystal GaAs substrates. Changes in impurity concentrations and distributions are seen after isothermal annealing at both 750 and 800°C. Evidence for Ga outdiffusion is clear.

AB - Backscattering of MeV 4He ions has been used to analyze the Ga and As content in SiO2 and Si3N4 dielectric layers deposited on single-crystal GaAs substrates. Changes in impurity concentrations and distributions are seen after isothermal annealing at both 750 and 800°C. Evidence for Ga outdiffusion is clear.

UR - http://www.scopus.com/inward/record.url?scp=0014864893&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0014864893&partnerID=8YFLogxK

U2 - 10.1063/1.1653422

DO - 10.1063/1.1653422

M3 - Article

AN - SCOPUS:0014864893

VL - 17

SP - 332

EP - 334

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 8

ER -