Origin and FEM-assisted evaluation of residual stress in thermally oxidized porous silicon

Géza Tóth, Krisztián Kordás, Andrea Edit Pap, Jouko Vähäkangas, Antti Uusimäki, Seppo Leppävuori

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The origin of residual strain is investigated in thermally oxidized porous silicon structures by computer supported finite element modeling. Based on theoretical approaches, unit cell series were developed to simulate the porous matter and its oxidation process. It is found that the residual strain is caused by both thermal and intrinsic stress components. The results show strain values between 1.69 × 10-3 and 2.26 × 10-3 according to the different oxidation extent, which is in good agreement with the experimental strain data obtained by XRD.

Original languageEnglish
Pages (from-to)123-128
Number of pages6
JournalComputational Materials Science
Volume34
Issue number2
DOIs
Publication statusPublished - Sep 1 2005

Keywords

  • Finite element method
  • Porous silicon
  • Residual strain
  • Thermal oxidation

ASJC Scopus subject areas

  • Computer Science(all)
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Physics and Astronomy(all)
  • Computational Mathematics

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