Orientation dependent growth of SiC nanocrystals at the SiO 2/Si interface

Research output: Contribution to journalArticle

Abstract

Cubic SiC nanocrystals are formed epitaxially and void-free on single crystal Si substrate by reactive annealing in CO. In this study characterization of the nucleation, growth and morphology is presented on differently oriented single crystal Si substrates. It is found that SiC nanocrystals of various shape can be grown in different densities on the (100), (110) and (111) Si surfaces with an average size of 30-60 nm. Effect of annealing time, CO concentration, substrate orientation and crystal size on crystallite growth is discussed. Parameters to obtain increased SiC nucleation density are determined.

Original languageEnglish
Pages (from-to)1973-1977
Number of pages5
JournalThin Solid Films
Volume520
Issue number6
DOIs
Publication statusPublished - Jan 1 2012

Fingerprint

Crystal orientation
Nanocrystals
nanocrystals
Carbon Monoxide
Nucleation
Substrates
Single crystals
nucleation
Annealing
annealing
single crystals
voids
Crystals
crystals

Keywords

  • CO annealing
  • Nanocrystals
  • Nucleation
  • Scanning electron microscopy
  • Silicon carbide
  • Transmission electron microscopy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Metals and Alloys
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

Orientation dependent growth of SiC nanocrystals at the SiO 2/Si interface. / Battistig, G.

In: Thin Solid Films, Vol. 520, No. 6, 01.01.2012, p. 1973-1977.

Research output: Contribution to journalArticle

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