Optimisation of porous silicon based passive optical elements by means of spectroscopic ellipsometry

J. Volk, M. Fried, O. Polgár, I. Bársony

Research output: Contribution to journalConference article

13 Citations (Scopus)

Abstract

Recently, growing interest in the development of passive optical elements based upon electrochemically etched porous silicon multilayer (PSM) stacks raised the need for different control of the preparation. Optimisation of PSM structures experimentally by try and error is, however, troublesome and time consuming. In the present study we demonstrate that spectroscopic ellipsometry (SE) with appropriate optical models can provide the missing feedback for the process engineer for exact design of structural parameters, thereby reducing the efforts for an optimisation cycle. The capabilities of the suggested methodology were experimentally verified on Bragg reflectors and Fabry-Perot interference filters.

Original languageEnglish
Pages (from-to)208-211
Number of pages4
JournalPhysica Status Solidi (A) Applied Research
Volume197
Issue number1
DOIs
Publication statusPublished - May 1 2003
Event3rd International Conference Porous Semiconductors - Science and Technology - Puerto de la Cruz, Spain
Duration: Mar 10 2002Mar 15 2002

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Optimisation of porous silicon based passive optical elements by means of spectroscopic ellipsometry'. Together they form a unique fingerprint.

  • Cite this