Optically Active Defects at the Si C/Si O2 Interface

B. C. Johnson, J. Woerle, D. Haasmann, C. T.K. Lew, R. A. Parker, H. Knowles, B. Pingault, M. Atature, A. Gali, S. Dimitrijev, M. Camarda, J. C. McCallum

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The SiC/SiO2 interface is a central component of many SiC electronic devices. Defects intrinsic to this interface can have a profound effect on their operation and reliability. It is therefore crucial to both understand the nature of these defects and develop characterization methods to enable optimized SiC-based devices. Here we make use of confocal microscopy to address single SiC/SiO2-related defects and show the technique to be a noncontact, nondestructive, spatially resolved and rapid means of assessing thequality of the SiC/SiO2 interface. This is achieved by a systematic investigation of the defect density of the SiC/SiO2 interface by varying the parameters of a nitric oxide passivation anneal after oxidation. Standard capacitance-based characterization techniques are used to benchmark optical emission rates and densities of the optically active SiC/SiO2-related defects. Further insight into the nature of these defects is provided by low-temperature optical measurements on single defects.

Original languageEnglish
Article number044024
JournalPhysical Review Applied
Issue number4
Publication statusPublished - Oct 11 2019


ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Johnson, B. C., Woerle, J., Haasmann, D., Lew, C. T. K., Parker, R. A., Knowles, H., Pingault, B., Atature, M., Gali, A., Dimitrijev, S., Camarda, M., & McCallum, J. C. (2019). Optically Active Defects at the Si C/Si O2 Interface. Physical Review Applied, 12(4), [044024]. https://doi.org/10.1103/PhysRevApplied.12.044024