We have investigated the optical properties of thermally stabilized, ion implantation amorphized silicon by ellipsometry in the wavelength region 632.8-365.0 nm during solid phase epitaxial regrowth (SPEG) process. The <100> Si wafers were amorphized by implantation of Si, P and Xe ions in the 40-700 keV energy region. Furnace annealing was done at 550°C for different times. It was found that the optical properties (complex dielectric function and complex refractive index) of the thermally stabilized amorphous silicon are between those of the as-implanted and monocrystalline silicon. We propose a very simple fine-grain polycrystalline model for thermally stabilized silicon with a grain size of about or less than 2 run.
ASJC Scopus subject areas
- Nuclear and High Energy Physics