Optical properties of thermally stabilized ion implantation amorphized silicon

M. Fried, T. Lohner, E. Jároli, G. Vízkelethy, E. Kótai, J. Gyulai, A. Bíró, J. Ádám, M. Somogyi, H. Kerkow

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

We have investigated the optical properties of thermally stabilized, ion implantation amorphized silicon by ellipsometry in the wavelength region 632.8-365.0 nm during solid phase epitaxial regrowth (SPEG) process. The <100> Si wafers were amorphized by implantation of Si, P and Xe ions in the 40-700 keV energy region. Furnace annealing was done at 550°C for different times. It was found that the optical properties (complex dielectric function and complex refractive index) of the thermally stabilized amorphous silicon are between those of the as-implanted and monocrystalline silicon. We propose a very simple fine-grain polycrystalline model for thermally stabilized silicon with a grain size of about or less than 2 run.

Original languageEnglish
Pages (from-to)577-581
Number of pages5
JournalNuclear Inst. and Methods in Physics Research, B
Volume19-20
Issue numberPART 2
DOIs
Publication statusPublished - 1987

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

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