Optical properties of InAs quantum dots: Common trends

M. Grassi-Alessi, M. Capizzi, A. S. Bhatti, A. Frova, F. Martelli, P. Frigeri, A. Bosacchi, S. Franchi

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We compare results obtained in several tens of samples grown by molecular-beam epitaxy under different growth conditions with a substantial amount of data found in the literature. By plotting the photoluminescence (PL) peak energy (Ep) of the quantum dot (QD) bands as a function of the nominal thickness of deposited InAs (L) three regions are clearly evidenced in the (Ep, L) plane. Below the so-called critical thickness (Lc), three-dimensional precursors of QD’s show a smooth dependence of their emission energy on L. Around Lc, QD’s show a steep dependence of Ep on L, independent of the growth conditions. Finally, for L≳2 ML one observes a saturation of the PL energy. This energy assumes only discrete values dependent on the growth conditions, which is attributed to the aggregation of quantum dots with different faceting.

Original languageEnglish
Pages (from-to)7620-7623
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number11
Publication statusPublished - Jan 1 1999

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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    Grassi-Alessi, M., Capizzi, M., Bhatti, A. S., Frova, A., Martelli, F., Frigeri, P., Bosacchi, A., & Franchi, S. (1999). Optical properties of InAs quantum dots: Common trends. Physical Review B - Condensed Matter and Materials Physics, 59(11), 7620-7623. https://doi.org/10.1103/PhysRevB.59.7620