Optical models for ellipsometric characterization of high temperature annealed nanostructured SiO2 films

T. Lohner, A. Szekeres, T. Nikolova, E. Vlaikova, P. Petrik, G. Huhn, K. Havancsak, I. Lisovskyy, S. Zlobin, I. Z. Indutnyy, P. E. Shepeliavyi

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4 Citations (Scopus)

Abstract

Silicon oxide films, vacuum evaporated and annealed in Ar atmosphere at temperatures of 1000 and 1100°C have been studied by spectroscopic ellipsometry. By the Bruggeman effective-medium approximation, different optical models have been applied for characterization of the nanostructured SiO x films. The results showed that during annealing at 1000°C, Si clusters were formed in the sub-stoichiometric SiO1.61 matrix, which crystallized in nanocrystallites with a volume fraction of ̃ 14 %. Annealing at 1100°C transformed the oxide structure to stoichiometric SiO2 and created 22% nanocrystalline Si inclusions. A silicon dioxide top layer existed in all films, the thickness of which varied with the technological steps and was well correlated with the surface roughness obtained from the AFM imaging.

Original languageEnglish
Pages (from-to)1288-1292
Number of pages5
JournalJournal of Optoelectronics and Advanced Materials
Volume11
Issue number9
Publication statusPublished - Sep 1 2009

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Keywords

  • Nc-Si clusters
  • Silicon oxides
  • Spectral ellipsometry and modelling
  • Vacuum evaporation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Lohner, T., Szekeres, A., Nikolova, T., Vlaikova, E., Petrik, P., Huhn, G., Havancsak, K., Lisovskyy, I., Zlobin, S., Indutnyy, I. Z., & Shepeliavyi, P. E. (2009). Optical models for ellipsometric characterization of high temperature annealed nanostructured SiO2 films. Journal of Optoelectronics and Advanced Materials, 11(9), 1288-1292.