Optical models for ellipsometric characterization of high temperature annealed nanostructured SiO2 films

T. Lohner, A. Szekeres, T. Nikolova, E. Vlaikova, P. Petrik, G. Huhn, K. Havancsák, I. Lisovskyy, S. Zlobin, I. Z. Indutnyy, P. E. Shepeliavyi

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Silicon oxide films, vacuum evaporated and annealed in Ar atmosphere at temperatures of 1000 and 1100°C have been studied by spectroscopic ellipsometry. By the Bruggeman effective-medium approximation, different optical models have been applied for characterization of the nanostructured SiO x films. The results showed that during annealing at 1000°C, Si clusters were formed in the sub-stoichiometric SiO1.61 matrix, which crystallized in nanocrystallites with a volume fraction of ̃ 14 %. Annealing at 1100°C transformed the oxide structure to stoichiometric SiO2 and created 22% nanocrystalline Si inclusions. A silicon dioxide top layer existed in all films, the thickness of which varied with the technological steps and was well correlated with the surface roughness obtained from the AFM imaging.

Original languageEnglish
Pages (from-to)1288-1292
Number of pages5
JournalJournal of Optoelectronics and Advanced Materials
Volume11
Issue number9
Publication statusPublished - Sep 2009

Fingerprint

Annealing
Nanocrystallites
annealing
Spectroscopic ellipsometry
Silicon oxides
silicon oxides
Silicon Dioxide
Oxides
Oxide films
ellipsometry
oxide films
Volume fraction
surface roughness
Surface roughness
Silica
atomic force microscopy
Vacuum
inclusions
silicon dioxide
Imaging techniques

Keywords

  • Nc-Si clusters
  • Silicon oxides
  • Spectral ellipsometry and modelling
  • Vacuum evaporation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Cite this

Optical models for ellipsometric characterization of high temperature annealed nanostructured SiO2 films. / Lohner, T.; Szekeres, A.; Nikolova, T.; Vlaikova, E.; Petrik, P.; Huhn, G.; Havancsák, K.; Lisovskyy, I.; Zlobin, S.; Indutnyy, I. Z.; Shepeliavyi, P. E.

In: Journal of Optoelectronics and Advanced Materials, Vol. 11, No. 9, 09.2009, p. 1288-1292.

Research output: Contribution to journalArticle

Lohner, T, Szekeres, A, Nikolova, T, Vlaikova, E, Petrik, P, Huhn, G, Havancsák, K, Lisovskyy, I, Zlobin, S, Indutnyy, IZ & Shepeliavyi, PE 2009, 'Optical models for ellipsometric characterization of high temperature annealed nanostructured SiO2 films', Journal of Optoelectronics and Advanced Materials, vol. 11, no. 9, pp. 1288-1292.
Lohner, T. ; Szekeres, A. ; Nikolova, T. ; Vlaikova, E. ; Petrik, P. ; Huhn, G. ; Havancsák, K. ; Lisovskyy, I. ; Zlobin, S. ; Indutnyy, I. Z. ; Shepeliavyi, P. E. / Optical models for ellipsometric characterization of high temperature annealed nanostructured SiO2 films. In: Journal of Optoelectronics and Advanced Materials. 2009 ; Vol. 11, No. 9. pp. 1288-1292.
@article{7cd38d9099d24840a29e92b5fdc9cc78,
title = "Optical models for ellipsometric characterization of high temperature annealed nanostructured SiO2 films",
abstract = "Silicon oxide films, vacuum evaporated and annealed in Ar atmosphere at temperatures of 1000 and 1100°C have been studied by spectroscopic ellipsometry. By the Bruggeman effective-medium approximation, different optical models have been applied for characterization of the nanostructured SiO x films. The results showed that during annealing at 1000°C, Si clusters were formed in the sub-stoichiometric SiO1.61 matrix, which crystallized in nanocrystallites with a volume fraction of ̃ 14 {\%}. Annealing at 1100°C transformed the oxide structure to stoichiometric SiO2 and created 22{\%} nanocrystalline Si inclusions. A silicon dioxide top layer existed in all films, the thickness of which varied with the technological steps and was well correlated with the surface roughness obtained from the AFM imaging.",
keywords = "Nc-Si clusters, Silicon oxides, Spectral ellipsometry and modelling, Vacuum evaporation",
author = "T. Lohner and A. Szekeres and T. Nikolova and E. Vlaikova and P. Petrik and G. Huhn and K. Havancs{\'a}k and I. Lisovskyy and S. Zlobin and Indutnyy, {I. Z.} and Shepeliavyi, {P. E.}",
year = "2009",
month = "9",
language = "English",
volume = "11",
pages = "1288--1292",
journal = "Journal of Optoelectronics and Advanced Materials",
issn = "1454-4164",
publisher = "National Institute of Optoelectronics",
number = "9",

}

TY - JOUR

T1 - Optical models for ellipsometric characterization of high temperature annealed nanostructured SiO2 films

AU - Lohner, T.

AU - Szekeres, A.

AU - Nikolova, T.

AU - Vlaikova, E.

AU - Petrik, P.

AU - Huhn, G.

AU - Havancsák, K.

AU - Lisovskyy, I.

AU - Zlobin, S.

AU - Indutnyy, I. Z.

AU - Shepeliavyi, P. E.

PY - 2009/9

Y1 - 2009/9

N2 - Silicon oxide films, vacuum evaporated and annealed in Ar atmosphere at temperatures of 1000 and 1100°C have been studied by spectroscopic ellipsometry. By the Bruggeman effective-medium approximation, different optical models have been applied for characterization of the nanostructured SiO x films. The results showed that during annealing at 1000°C, Si clusters were formed in the sub-stoichiometric SiO1.61 matrix, which crystallized in nanocrystallites with a volume fraction of ̃ 14 %. Annealing at 1100°C transformed the oxide structure to stoichiometric SiO2 and created 22% nanocrystalline Si inclusions. A silicon dioxide top layer existed in all films, the thickness of which varied with the technological steps and was well correlated with the surface roughness obtained from the AFM imaging.

AB - Silicon oxide films, vacuum evaporated and annealed in Ar atmosphere at temperatures of 1000 and 1100°C have been studied by spectroscopic ellipsometry. By the Bruggeman effective-medium approximation, different optical models have been applied for characterization of the nanostructured SiO x films. The results showed that during annealing at 1000°C, Si clusters were formed in the sub-stoichiometric SiO1.61 matrix, which crystallized in nanocrystallites with a volume fraction of ̃ 14 %. Annealing at 1100°C transformed the oxide structure to stoichiometric SiO2 and created 22% nanocrystalline Si inclusions. A silicon dioxide top layer existed in all films, the thickness of which varied with the technological steps and was well correlated with the surface roughness obtained from the AFM imaging.

KW - Nc-Si clusters

KW - Silicon oxides

KW - Spectral ellipsometry and modelling

KW - Vacuum evaporation

UR - http://www.scopus.com/inward/record.url?scp=76149143123&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=76149143123&partnerID=8YFLogxK

M3 - Article

VL - 11

SP - 1288

EP - 1292

JO - Journal of Optoelectronics and Advanced Materials

JF - Journal of Optoelectronics and Advanced Materials

SN - 1454-4164

IS - 9

ER -