Optical gain measurements in multiple quantum wells at 2 K

J. Butty, JL Staehli, A. Bosacchi, S. Franchi

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The optical gain spectra of strongly excited multiple GaAs-(Ga,Al)As quantum wells have been determined using the variable stripe length method. The gain spectra are obtained by analysing the dependence of the amplified luminescence intensities on stripe length. In the novel fitting procedure we applied it is assumed that the optically generated carriers of the electron-hole plasma are in quasi equilibrium. It is found that this assumption is justified in all the cases considered here where saturation effects are absent.

Original languageEnglish
Pages (from-to)155-159
Number of pages5
JournalSolid State Communications
Volume86
Issue number3
DOIs
Publication statusPublished - 1993

Fingerprint

Gain measurement
Optical gain
Semiconductor quantum wells
Luminescence
quantum wells
Plasmas
Electrons
luminescence
saturation
gallium arsenide

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Optical gain measurements in multiple quantum wells at 2 K. / Butty, J.; Staehli, JL; Bosacchi, A.; Franchi, S.

In: Solid State Communications, Vol. 86, No. 3, 1993, p. 155-159.

Research output: Contribution to journalArticle

Butty, J. ; Staehli, JL ; Bosacchi, A. ; Franchi, S. / Optical gain measurements in multiple quantum wells at 2 K. In: Solid State Communications. 1993 ; Vol. 86, No. 3. pp. 155-159.
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