Optical gain in photoconductors made of compensated and partially compensated GaAs

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2 Citations (Scopus)

Abstract

The dc gain behaviour of GaAs photoconductors realized utilizing a partially compensated buffer layer of an epitaxial MESFET structure as well as a Cr-doped semiinsulating substrate is studied. The light-power dependence of the gain hints to the dominant role of the bimolecular recombination process and trapmediated gain, and only a minor role of the surface photovoltaic effect. The possible correlation between dark current and gain mechanism in the MESFET-like device is pointed out.

Original languageEnglish
Pages (from-to)299-302
Number of pages4
JournalApplied Physics A Materials Science & Processing
Volume60
Issue number3
DOIs
Publication statusPublished - Mar 1 1995

Keywords

  • 72.40.+w
  • 73.50.Pz
  • 85.60.Gz

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)

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