The dc gain behaviour of GaAs photoconductors realized utilizing a partially compensated buffer layer of an epitaxial MESFET structure as well as a Cr-doped semiinsulating substrate is studied. The light-power dependence of the gain hints to the dominant role of the bimolecular recombination process and trapmediated gain, and only a minor role of the surface photovoltaic effect. The possible correlation between dark current and gain mechanism in the MESFET-like device is pointed out.
ASJC Scopus subject areas
- Materials Science(all)