Optical dispersion relations in two types of amorphous silicon using Adachis expression

M. Fried, A. Van Silfhout

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Using Adachis expression [S. Adachi, Phys. Rev. B 43, 12 316 (1991)] for the complex dielectric function of amorphous semiconductors, we fit out experimental results [M. Fried et al., J. Appl. Phys. 71, 5260 (1992)] for two different types (self-implanted and implanted-annealed or relaxed) of amorphous silicon. The complex dielectric functions were determined by spectroscopic ellipsometric measurements in the visible wavelength region. The fit resulted in different optical band gap (Eg) and damping (or broadening,) energies. Eg is lower and is higher in implanted a-Si. Both changes can be interpreted by the presence of more structural disorder point defects in implanted a-Si compared with relaxed a-Si.

Original languageEnglish
Pages (from-to)5699-5702
Number of pages4
JournalPhysical Review B
Volume49
Issue number8
DOIs
Publication statusPublished - 1994

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Amorphous silicon
amorphous silicon
Amorphous semiconductors
amorphous semiconductors
Optical band gaps
Point defects
point defects
Damping
damping
disorders
Wavelength
wavelengths
energy
B 43

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Optical dispersion relations in two types of amorphous silicon using Adachis expression. / Fried, M.; Van Silfhout, A.

In: Physical Review B, Vol. 49, No. 8, 1994, p. 5699-5702.

Research output: Contribution to journalArticle

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