Optical characterization of PLD grown nitrogen-doped TiO2 thin films

B. Farkas, J. Budai, I. Kabalci, P. Heszler, Z. Geretovszky

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

Nitrogen-doped TiO2 thin films were prepared by pulsed laser deposition (PLD) by ablating metallic Ti target with pulses of 248 nm wavelength in reactive atmospheres of O2/N2 gas mixtures. The layers were characterized by UV-VIS spectrophotometry and variable angle spectroscopic ellipsometry with complementary profilometry for measuring the thickness of the films. Band gap and extinction coefficient values are presented for films deposited at different substrate temperatures and for varied N2 content of the gas mixture. The shown tendencies are correlated to nitrogen incorporation into the TiO2-xNx layers. It is shown that layers of significantly increased visible extinction coefficient with band gap energy as low as 2.89 eV can be obtained. A method is also presented how the spectroscopic ellipsometric data should be evaluated in order to result reliable band gap values.

Original languageEnglish
Pages (from-to)3484-3488
Number of pages5
JournalApplied Surface Science
Volume254
Issue number11
DOIs
Publication statusPublished - Mar 30 2008

Fingerprint

Pulsed laser deposition
pulsed laser deposition
Energy gap
Nitrogen
nitrogen
Gas mixtures
Thin films
gas mixtures
extinction
thin films
Profilometry
Spectroscopic ellipsometry
Spectrophotometry
coefficients
spectrophotometry
ellipsometry
tendencies
atmospheres
Wavelength
Substrates

Keywords

  • Photocatalytic material
  • Pulsed laser deposition
  • Substitutional doping
  • Titanium-dioxide
  • Visible light

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films
  • Condensed Matter Physics

Cite this

Optical characterization of PLD grown nitrogen-doped TiO2 thin films. / Farkas, B.; Budai, J.; Kabalci, I.; Heszler, P.; Geretovszky, Z.

In: Applied Surface Science, Vol. 254, No. 11, 30.03.2008, p. 3484-3488.

Research output: Contribution to journalArticle

Farkas, B. ; Budai, J. ; Kabalci, I. ; Heszler, P. ; Geretovszky, Z. / Optical characterization of PLD grown nitrogen-doped TiO2 thin films. In: Applied Surface Science. 2008 ; Vol. 254, No. 11. pp. 3484-3488.
@article{b909e47f5b2f46bcb6cd933585c1ba83,
title = "Optical characterization of PLD grown nitrogen-doped TiO2 thin films",
abstract = "Nitrogen-doped TiO2 thin films were prepared by pulsed laser deposition (PLD) by ablating metallic Ti target with pulses of 248 nm wavelength in reactive atmospheres of O2/N2 gas mixtures. The layers were characterized by UV-VIS spectrophotometry and variable angle spectroscopic ellipsometry with complementary profilometry for measuring the thickness of the films. Band gap and extinction coefficient values are presented for films deposited at different substrate temperatures and for varied N2 content of the gas mixture. The shown tendencies are correlated to nitrogen incorporation into the TiO2-xNx layers. It is shown that layers of significantly increased visible extinction coefficient with band gap energy as low as 2.89 eV can be obtained. A method is also presented how the spectroscopic ellipsometric data should be evaluated in order to result reliable band gap values.",
keywords = "Photocatalytic material, Pulsed laser deposition, Substitutional doping, Titanium-dioxide, Visible light",
author = "B. Farkas and J. Budai and I. Kabalci and P. Heszler and Z. Geretovszky",
year = "2008",
month = "3",
day = "30",
doi = "10.1016/j.apsusc.2007.11.034",
language = "English",
volume = "254",
pages = "3484--3488",
journal = "Applied Surface Science",
issn = "0169-4332",
publisher = "Elsevier",
number = "11",

}

TY - JOUR

T1 - Optical characterization of PLD grown nitrogen-doped TiO2 thin films

AU - Farkas, B.

AU - Budai, J.

AU - Kabalci, I.

AU - Heszler, P.

AU - Geretovszky, Z.

PY - 2008/3/30

Y1 - 2008/3/30

N2 - Nitrogen-doped TiO2 thin films were prepared by pulsed laser deposition (PLD) by ablating metallic Ti target with pulses of 248 nm wavelength in reactive atmospheres of O2/N2 gas mixtures. The layers were characterized by UV-VIS spectrophotometry and variable angle spectroscopic ellipsometry with complementary profilometry for measuring the thickness of the films. Band gap and extinction coefficient values are presented for films deposited at different substrate temperatures and for varied N2 content of the gas mixture. The shown tendencies are correlated to nitrogen incorporation into the TiO2-xNx layers. It is shown that layers of significantly increased visible extinction coefficient with band gap energy as low as 2.89 eV can be obtained. A method is also presented how the spectroscopic ellipsometric data should be evaluated in order to result reliable band gap values.

AB - Nitrogen-doped TiO2 thin films were prepared by pulsed laser deposition (PLD) by ablating metallic Ti target with pulses of 248 nm wavelength in reactive atmospheres of O2/N2 gas mixtures. The layers were characterized by UV-VIS spectrophotometry and variable angle spectroscopic ellipsometry with complementary profilometry for measuring the thickness of the films. Band gap and extinction coefficient values are presented for films deposited at different substrate temperatures and for varied N2 content of the gas mixture. The shown tendencies are correlated to nitrogen incorporation into the TiO2-xNx layers. It is shown that layers of significantly increased visible extinction coefficient with band gap energy as low as 2.89 eV can be obtained. A method is also presented how the spectroscopic ellipsometric data should be evaluated in order to result reliable band gap values.

KW - Photocatalytic material

KW - Pulsed laser deposition

KW - Substitutional doping

KW - Titanium-dioxide

KW - Visible light

UR - http://www.scopus.com/inward/record.url?scp=39749107367&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=39749107367&partnerID=8YFLogxK

U2 - 10.1016/j.apsusc.2007.11.034

DO - 10.1016/j.apsusc.2007.11.034

M3 - Article

AN - SCOPUS:39749107367

VL - 254

SP - 3484

EP - 3488

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

IS - 11

ER -