Optical characterization of AlxGa1-xSb/GaSb epitaxial layers

S. Di Lernia, M. Geddo, G. Guizzetti, M. Patrini, A. Bosacchi, S. Franchi, R. Magnanini

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

Spectroscopic ellipsometry from 1.4 to 5 eV was used to systematically characterize epitaxial heterostructures AlxGa1-xSb/GaSb for different x concentrations (x≤0.5). The structures were grown by MBE at temperatures and beam equivalent pressure ratios which optimize their low-temperature photoluminescence properties. Complex dielectric functions qq(ω) of AlxGa1-xSb versus x were derived, for the first time, from the ellipsometric spectra after mathematically removing the oxide overlayer effects. The qq(ω) spectra were analyzed with their second energy-derivatives in term of standard analytical lineshapes: in particular the E1, E1+△1 and E2 critical point energies, broadening and amplitude parameters were derived as a function of x. On this basis we verified that the energy-shift model is appropriate to interpolate qq(ω) for any x≤0.5, thus allowing a nondestructive optical diagnostic of layer thickness and composition of epitaxial heterostructures based on AlxGa1-xSb.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium - Proceedings
PublisherMaterials Research Society
Pages389-394
Number of pages6
Volume406
Publication statusPublished - 1996
EventProceedings of the 1995 MRS Fall Symposium - Boston, MA, USA
Duration: Nov 27 1995Nov 30 1995

Other

OtherProceedings of the 1995 MRS Fall Symposium
CityBoston, MA, USA
Period11/27/9511/30/95

Fingerprint

Epitaxial layers
Heterojunctions
Spectroscopic ellipsometry
Molecular beam epitaxy
Oxides
Photoluminescence
Derivatives
Temperature
Chemical analysis

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Di Lernia, S., Geddo, M., Guizzetti, G., Patrini, M., Bosacchi, A., Franchi, S., & Magnanini, R. (1996). Optical characterization of AlxGa1-xSb/GaSb epitaxial layers. In Materials Research Society Symposium - Proceedings (Vol. 406, pp. 389-394). Materials Research Society.

Optical characterization of AlxGa1-xSb/GaSb epitaxial layers. / Di Lernia, S.; Geddo, M.; Guizzetti, G.; Patrini, M.; Bosacchi, A.; Franchi, S.; Magnanini, R.

Materials Research Society Symposium - Proceedings. Vol. 406 Materials Research Society, 1996. p. 389-394.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Di Lernia, S, Geddo, M, Guizzetti, G, Patrini, M, Bosacchi, A, Franchi, S & Magnanini, R 1996, Optical characterization of AlxGa1-xSb/GaSb epitaxial layers. in Materials Research Society Symposium - Proceedings. vol. 406, Materials Research Society, pp. 389-394, Proceedings of the 1995 MRS Fall Symposium, Boston, MA, USA, 11/27/95.
Di Lernia S, Geddo M, Guizzetti G, Patrini M, Bosacchi A, Franchi S et al. Optical characterization of AlxGa1-xSb/GaSb epitaxial layers. In Materials Research Society Symposium - Proceedings. Vol. 406. Materials Research Society. 1996. p. 389-394
Di Lernia, S. ; Geddo, M. ; Guizzetti, G. ; Patrini, M. ; Bosacchi, A. ; Franchi, S. ; Magnanini, R. / Optical characterization of AlxGa1-xSb/GaSb epitaxial layers. Materials Research Society Symposium - Proceedings. Vol. 406 Materials Research Society, 1996. pp. 389-394
@inproceedings{9f4b150938fd40baac56b2295ad3431b,
title = "Optical characterization of AlxGa1-xSb/GaSb epitaxial layers",
abstract = "Spectroscopic ellipsometry from 1.4 to 5 eV was used to systematically characterize epitaxial heterostructures AlxGa1-xSb/GaSb for different x concentrations (x≤0.5). The structures were grown by MBE at temperatures and beam equivalent pressure ratios which optimize their low-temperature photoluminescence properties. Complex dielectric functions qq(ω) of AlxGa1-xSb versus x were derived, for the first time, from the ellipsometric spectra after mathematically removing the oxide overlayer effects. The qq(ω) spectra were analyzed with their second energy-derivatives in term of standard analytical lineshapes: in particular the E1, E1+△1 and E2 critical point energies, broadening and amplitude parameters were derived as a function of x. On this basis we verified that the energy-shift model is appropriate to interpolate qq(ω) for any x≤0.5, thus allowing a nondestructive optical diagnostic of layer thickness and composition of epitaxial heterostructures based on AlxGa1-xSb.",
author = "{Di Lernia}, S. and M. Geddo and G. Guizzetti and M. Patrini and A. Bosacchi and S. Franchi and R. Magnanini",
year = "1996",
language = "English",
volume = "406",
pages = "389--394",
booktitle = "Materials Research Society Symposium - Proceedings",
publisher = "Materials Research Society",

}

TY - GEN

T1 - Optical characterization of AlxGa1-xSb/GaSb epitaxial layers

AU - Di Lernia, S.

AU - Geddo, M.

AU - Guizzetti, G.

AU - Patrini, M.

AU - Bosacchi, A.

AU - Franchi, S.

AU - Magnanini, R.

PY - 1996

Y1 - 1996

N2 - Spectroscopic ellipsometry from 1.4 to 5 eV was used to systematically characterize epitaxial heterostructures AlxGa1-xSb/GaSb for different x concentrations (x≤0.5). The structures were grown by MBE at temperatures and beam equivalent pressure ratios which optimize their low-temperature photoluminescence properties. Complex dielectric functions qq(ω) of AlxGa1-xSb versus x were derived, for the first time, from the ellipsometric spectra after mathematically removing the oxide overlayer effects. The qq(ω) spectra were analyzed with their second energy-derivatives in term of standard analytical lineshapes: in particular the E1, E1+△1 and E2 critical point energies, broadening and amplitude parameters were derived as a function of x. On this basis we verified that the energy-shift model is appropriate to interpolate qq(ω) for any x≤0.5, thus allowing a nondestructive optical diagnostic of layer thickness and composition of epitaxial heterostructures based on AlxGa1-xSb.

AB - Spectroscopic ellipsometry from 1.4 to 5 eV was used to systematically characterize epitaxial heterostructures AlxGa1-xSb/GaSb for different x concentrations (x≤0.5). The structures were grown by MBE at temperatures and beam equivalent pressure ratios which optimize their low-temperature photoluminescence properties. Complex dielectric functions qq(ω) of AlxGa1-xSb versus x were derived, for the first time, from the ellipsometric spectra after mathematically removing the oxide overlayer effects. The qq(ω) spectra were analyzed with their second energy-derivatives in term of standard analytical lineshapes: in particular the E1, E1+△1 and E2 critical point energies, broadening and amplitude parameters were derived as a function of x. On this basis we verified that the energy-shift model is appropriate to interpolate qq(ω) for any x≤0.5, thus allowing a nondestructive optical diagnostic of layer thickness and composition of epitaxial heterostructures based on AlxGa1-xSb.

UR - http://www.scopus.com/inward/record.url?scp=0029735396&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029735396&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0029735396

VL - 406

SP - 389

EP - 394

BT - Materials Research Society Symposium - Proceedings

PB - Materials Research Society

ER -