Optical Cavity Based on GaN Planar Nanowires Grown by Selective Area Metal-Organic Vapor Phase Epitaxy

Galia Pozina, Konstantin A. Ivanov, Maxim I. Mitrofanov, Mikhail A. Kaliteevski, Konstantin M. Morozov, Iaroslav V. Levitskii, Gleb V. Voznyuk, Vadim P. Evtikhiev, S. Rodin

Research output: Contribution to journalArticle

Abstract

GaN planar nanowires (NWs) are fabricated by selective area metal-organic vapor phase epitaxy using focused ion beam etching of trench pattern in the Si 3 N 4 mask. Two crystallographic orientations of NWs along (Formula presented.) and (Formula presented.) directions are investigated. The coherent growth is confirmed for both directions; however, the best morphology, crystalline and optical properties are found in the GaN planar NWs fabricated along the (Formula presented.) axis. Cathodoluminescence (CL) at 5 K reveals a presence of Fabry–Perot modes in the region of 1.8–2.5 eV for the NWs fabricated in the (Formula presented.) direction. The position and intensity of the Fabry–Perot peaks vary depending on measured point within the NW, which is explained by the model based on the Purcell coefficient calculations. It is shown that small fluctuations in the NW thickness cause a noticeable shift of the Fabry–Perot modes energies, while the enhancement or reduction of the emission intensity for the Fabry–Perot peaks depend on the position of the emitter inside the planar NW.

Original languageEnglish
Article number1800631
JournalPhysica Status Solidi (B) Basic Research
DOIs
Publication statusPublished - Jan 1 2019

Fingerprint

Vapor phase epitaxy
vapor phase epitaxy
Nanowires
nanowires
Metals
cavities
metals
Cathodoluminescence
Focused ion beams
cathodoluminescence
Masks
Etching
emitters
masks
Optical properties
ion beams
etching
Crystalline materials
optical properties
augmentation

Keywords

  • Fabry–Perot modes
  • GaN
  • optical cavity
  • planar nanowires
  • Purcell coefficient

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Optical Cavity Based on GaN Planar Nanowires Grown by Selective Area Metal-Organic Vapor Phase Epitaxy. / Pozina, Galia; Ivanov, Konstantin A.; Mitrofanov, Maxim I.; Kaliteevski, Mikhail A.; Morozov, Konstantin M.; Levitskii, Iaroslav V.; Voznyuk, Gleb V.; Evtikhiev, Vadim P.; Rodin, S.

In: Physica Status Solidi (B) Basic Research, 01.01.2019.

Research output: Contribution to journalArticle

Pozina, Galia ; Ivanov, Konstantin A. ; Mitrofanov, Maxim I. ; Kaliteevski, Mikhail A. ; Morozov, Konstantin M. ; Levitskii, Iaroslav V. ; Voznyuk, Gleb V. ; Evtikhiev, Vadim P. ; Rodin, S. / Optical Cavity Based on GaN Planar Nanowires Grown by Selective Area Metal-Organic Vapor Phase Epitaxy. In: Physica Status Solidi (B) Basic Research. 2019.
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