Optical and structural studies of high-quality bulk-like GaN grown by HVPE on a MOVPE AlN buffer layer

D. Gogova, D. Siche, R. Fornari, B. Monemar, P. Gibart, L. Dobos, B. Pécz, F. Tuomisto, R. Bayazitov, G. Zollo

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

High-quality 400 νm thick GaN has been grown by hydride vapour phase epitaxy (HVPE) on (0 0 0 1) sapphire with a 2 νm thick AlN buffer layer. The material's crystalline quality and homogeneity was verified by x-ray diffraction (XRD), low-temperature photoluminesence (LT-PL) and LT cathodoluminescence. Plan-view transmission electron microscopy images reveal a low dislocation density of ∼1.25 × 107 cm-2. The residual stress of the material was studied by two complementary techniques. LT-PL spectra show the main neutral donor bound exciton line at 3.4720 eV. This line position suggests virtually strain-free material with a high crystalline quality as indicated by the small full width at half maximum value of 0.78 meV. The presence of well resolved A- and B-free excitons in the LT-PL spectra and the absence of a yellow luminescence band prove the high quality of the HVPE-GaN in terms of purity and crystallinity. These findings are consistent with the XRD results, implying the high crystalline quality of the material grown. Hence, the material studied is well suited as a lattice parameter and thermal-expansion- coefficient matched substrate for further homoepitaxy, as needed for high-quality III-nitride device applications. Strain-free homoepitaxy on native substrates is needed to decrease considerably the defect density and in that way an improvement of the device's performance and lifetime can be achieved.

Original languageEnglish
Pages (from-to)702-708
Number of pages7
JournalSemiconductor Science and Technology
Volume21
Issue number5
DOIs
Publication statusPublished - May 1 2006

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Metallorganic vapor phase epitaxy
Vapor phase epitaxy
Buffer layers
Hydrides
vapor phase epitaxy
hydrides
buffers
Crystalline materials
Excitons
Diffraction
X rays
Cathodoluminescence
Aluminum Oxide
Defect density
x ray diffraction
Substrates
Full width at half maximum
excitons
Sapphire
Nitrides

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Optical and structural studies of high-quality bulk-like GaN grown by HVPE on a MOVPE AlN buffer layer. / Gogova, D.; Siche, D.; Fornari, R.; Monemar, B.; Gibart, P.; Dobos, L.; Pécz, B.; Tuomisto, F.; Bayazitov, R.; Zollo, G.

In: Semiconductor Science and Technology, Vol. 21, No. 5, 01.05.2006, p. 702-708.

Research output: Contribution to journalArticle

Gogova, D, Siche, D, Fornari, R, Monemar, B, Gibart, P, Dobos, L, Pécz, B, Tuomisto, F, Bayazitov, R & Zollo, G 2006, 'Optical and structural studies of high-quality bulk-like GaN grown by HVPE on a MOVPE AlN buffer layer', Semiconductor Science and Technology, vol. 21, no. 5, pp. 702-708. https://doi.org/10.1088/0268-1242/21/5/024
Gogova, D. ; Siche, D. ; Fornari, R. ; Monemar, B. ; Gibart, P. ; Dobos, L. ; Pécz, B. ; Tuomisto, F. ; Bayazitov, R. ; Zollo, G. / Optical and structural studies of high-quality bulk-like GaN grown by HVPE on a MOVPE AlN buffer layer. In: Semiconductor Science and Technology. 2006 ; Vol. 21, No. 5. pp. 702-708.
@article{16e46f11dae143abad62dc4736bd5da2,
title = "Optical and structural studies of high-quality bulk-like GaN grown by HVPE on a MOVPE AlN buffer layer",
abstract = "High-quality 400 νm thick GaN has been grown by hydride vapour phase epitaxy (HVPE) on (0 0 0 1) sapphire with a 2 νm thick AlN buffer layer. The material's crystalline quality and homogeneity was verified by x-ray diffraction (XRD), low-temperature photoluminesence (LT-PL) and LT cathodoluminescence. Plan-view transmission electron microscopy images reveal a low dislocation density of ∼1.25 × 107 cm-2. The residual stress of the material was studied by two complementary techniques. LT-PL spectra show the main neutral donor bound exciton line at 3.4720 eV. This line position suggests virtually strain-free material with a high crystalline quality as indicated by the small full width at half maximum value of 0.78 meV. The presence of well resolved A- and B-free excitons in the LT-PL spectra and the absence of a yellow luminescence band prove the high quality of the HVPE-GaN in terms of purity and crystallinity. These findings are consistent with the XRD results, implying the high crystalline quality of the material grown. Hence, the material studied is well suited as a lattice parameter and thermal-expansion- coefficient matched substrate for further homoepitaxy, as needed for high-quality III-nitride device applications. Strain-free homoepitaxy on native substrates is needed to decrease considerably the defect density and in that way an improvement of the device's performance and lifetime can be achieved.",
author = "D. Gogova and D. Siche and R. Fornari and B. Monemar and P. Gibart and L. Dobos and B. P{\'e}cz and F. Tuomisto and R. Bayazitov and G. Zollo",
year = "2006",
month = "5",
day = "1",
doi = "10.1088/0268-1242/21/5/024",
language = "English",
volume = "21",
pages = "702--708",
journal = "Semiconductor Science and Technology",
issn = "0268-1242",
publisher = "IOP Publishing Ltd.",
number = "5",

}

TY - JOUR

T1 - Optical and structural studies of high-quality bulk-like GaN grown by HVPE on a MOVPE AlN buffer layer

AU - Gogova, D.

AU - Siche, D.

AU - Fornari, R.

AU - Monemar, B.

AU - Gibart, P.

AU - Dobos, L.

AU - Pécz, B.

AU - Tuomisto, F.

AU - Bayazitov, R.

AU - Zollo, G.

PY - 2006/5/1

Y1 - 2006/5/1

N2 - High-quality 400 νm thick GaN has been grown by hydride vapour phase epitaxy (HVPE) on (0 0 0 1) sapphire with a 2 νm thick AlN buffer layer. The material's crystalline quality and homogeneity was verified by x-ray diffraction (XRD), low-temperature photoluminesence (LT-PL) and LT cathodoluminescence. Plan-view transmission electron microscopy images reveal a low dislocation density of ∼1.25 × 107 cm-2. The residual stress of the material was studied by two complementary techniques. LT-PL spectra show the main neutral donor bound exciton line at 3.4720 eV. This line position suggests virtually strain-free material with a high crystalline quality as indicated by the small full width at half maximum value of 0.78 meV. The presence of well resolved A- and B-free excitons in the LT-PL spectra and the absence of a yellow luminescence band prove the high quality of the HVPE-GaN in terms of purity and crystallinity. These findings are consistent with the XRD results, implying the high crystalline quality of the material grown. Hence, the material studied is well suited as a lattice parameter and thermal-expansion- coefficient matched substrate for further homoepitaxy, as needed for high-quality III-nitride device applications. Strain-free homoepitaxy on native substrates is needed to decrease considerably the defect density and in that way an improvement of the device's performance and lifetime can be achieved.

AB - High-quality 400 νm thick GaN has been grown by hydride vapour phase epitaxy (HVPE) on (0 0 0 1) sapphire with a 2 νm thick AlN buffer layer. The material's crystalline quality and homogeneity was verified by x-ray diffraction (XRD), low-temperature photoluminesence (LT-PL) and LT cathodoluminescence. Plan-view transmission electron microscopy images reveal a low dislocation density of ∼1.25 × 107 cm-2. The residual stress of the material was studied by two complementary techniques. LT-PL spectra show the main neutral donor bound exciton line at 3.4720 eV. This line position suggests virtually strain-free material with a high crystalline quality as indicated by the small full width at half maximum value of 0.78 meV. The presence of well resolved A- and B-free excitons in the LT-PL spectra and the absence of a yellow luminescence band prove the high quality of the HVPE-GaN in terms of purity and crystallinity. These findings are consistent with the XRD results, implying the high crystalline quality of the material grown. Hence, the material studied is well suited as a lattice parameter and thermal-expansion- coefficient matched substrate for further homoepitaxy, as needed for high-quality III-nitride device applications. Strain-free homoepitaxy on native substrates is needed to decrease considerably the defect density and in that way an improvement of the device's performance and lifetime can be achieved.

UR - http://www.scopus.com/inward/record.url?scp=33645695774&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33645695774&partnerID=8YFLogxK

U2 - 10.1088/0268-1242/21/5/024

DO - 10.1088/0268-1242/21/5/024

M3 - Article

AN - SCOPUS:33645695774

VL - 21

SP - 702

EP - 708

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

IS - 5

ER -