Optical and electrical properties of Al doped ZnO layers measured by wide angle beam spectroscopic ellipsometry

C. Major, G. Juhász, A. Nemeth, Z. Labadi, P. Petrik, Z. Horváth, M. Fried

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Al-doped ZnO (ZAO) thin film was deposited by reactive magnetron sputtering to be used as transparent conductive oxide. The sample was deposited at given value of plasma power, Ar/O2 ratio, and target voltage on a 95mm diameter Si substrate. The specific resistance values were measured along the center line of the sample at 9 points prior to spectroscopic ellipsometry measurements. Wide angle beam (WAB) spectroscopic ellipsometry (SE) measurement was carried out in the range of 320-570nm to obtain the spectra of the mentioned nine points. WAB ellipsometers uses non-collimated illumination and gives multiple-angle-of-incidence and multiwavelength information. Our aim was to make our WAB ellipsometer suitable for spectral measurements and to obtain the spectra of many points of an entire sample simultaneously.The results show that WAB spectroscopic ellipsometry (WAB-SE) mixed with an appropriate model dielectric function (MDF) has the capability to make "in line" control in solar cell fabrication.

Original languageEnglish
Title of host publicationTransparent Conductors and Semiconductors for Optoelectronics
Pages31-36
Number of pages6
Publication statusPublished - Dec 1 2009
Event2009 MRS Fall Meeting - Boston, MA, United States
Duration: Nov 30 2009Dec 4 2009

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1109
ISSN (Print)0272-9172

Other

Other2009 MRS Fall Meeting
CountryUnited States
CityBoston, MA
Period11/30/0912/4/09

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ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Major, C., Juhász, G., Nemeth, A., Labadi, Z., Petrik, P., Horváth, Z., & Fried, M. (2009). Optical and electrical properties of Al doped ZnO layers measured by wide angle beam spectroscopic ellipsometry. In Transparent Conductors and Semiconductors for Optoelectronics (pp. 31-36). (Materials Research Society Symposium Proceedings; Vol. 1109).