Al-doped ZnO (ZAO) thin film was deposited by reactive magnetron sputtering to be used as transparent conductive oxide. The sample was deposited at given value of plasma power, Ar/O2 ratio, and target voltage on a 95mm diameter Si substrate. The specific resistance values were measured along the center line of the sample at 9 points prior to spectroscopic ellipsometry measurements. Wide angle beam (WAB) spectroscopic ellipsometry (SE) measurement was carried out in the range of 320-570nm to obtain the spectra of the mentioned nine points. WAB ellipsometers uses non-collimated illumination and gives multiple-angle-of-incidence and multiwavelength information. Our aim was to make our WAB ellipsometer suitable for spectral measurements and to obtain the spectra of many points of an entire sample simultaneously.The results show that WAB spectroscopic ellipsometry (WAB-SE) mixed with an appropriate model dielectric function (MDF) has the capability to make "in line" control in solar cell fabrication.