Optical and electrical characterization of aluminium doped ZnO layers

C. Major, A. Nemeth, G. Radnóczi, Z. Czigány, M. Fried, Z. Labadi, I. Bársony

Research output: Contribution to journalArticle

36 Citations (Scopus)

Abstract

Al doped ZnO (ZAO) thin films (with Al-doping levels 2 at.%) were deposited at different deposition parameters on silicon substrate by reactive magnetron sputtering for solar cell contacts, and samples were investigated by transmission electron microscopy (TEM), electron energy loss spectroscopy (EELS) and spectroscopic ellipsometry (SE). Specific resistances were measured by the well known 4-pin method. Well visible columnar structure and in most cases voided other regions were observed at the grain boundaries by TEM. EELS measurements were carried out to characterize the grain boundaries, and the results show spacing voids between columnar grains at samples with high specific resistance, while no spacing voids were observed at highly conductive samples. SE measurements were evaluated by using the analytical expression suggested by Yoshikawa and Adachi [H. Yoshikawa, S. Adachi, Japanese Journal of Applied Physics 36 (1997) 6237], and the results show correlation between specific resistance and band gap energy and direct exciton strength parameter.

Original languageEnglish
Pages (from-to)8907-8912
Number of pages6
JournalApplied Surface Science
Volume255
Issue number21
DOIs
Publication statusPublished - Aug 15 2009

Fingerprint

Spectroscopic ellipsometry
Electron energy loss spectroscopy
Aluminum
Grain boundaries
Transmission electron microscopy
Reactive sputtering
Silicon
Excitons
Magnetron sputtering
Solar cells
Energy gap
Physics
Doping (additives)
Thin films
Substrates
LDS 751

Keywords

  • Reactive sputtering
  • Spectroscopic ellipsometry
  • Structure-property relation
  • Transparent conductive oxides
  • Zinc oxide

ASJC Scopus subject areas

  • Surfaces, Coatings and Films

Cite this

Optical and electrical characterization of aluminium doped ZnO layers. / Major, C.; Nemeth, A.; Radnóczi, G.; Czigány, Z.; Fried, M.; Labadi, Z.; Bársony, I.

In: Applied Surface Science, Vol. 255, No. 21, 15.08.2009, p. 8907-8912.

Research output: Contribution to journalArticle

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AU - Major, C.

AU - Nemeth, A.

AU - Radnóczi, G.

AU - Czigány, Z.

AU - Fried, M.

AU - Labadi, Z.

AU - Bársony, I.

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AB - Al doped ZnO (ZAO) thin films (with Al-doping levels 2 at.%) were deposited at different deposition parameters on silicon substrate by reactive magnetron sputtering for solar cell contacts, and samples were investigated by transmission electron microscopy (TEM), electron energy loss spectroscopy (EELS) and spectroscopic ellipsometry (SE). Specific resistances were measured by the well known 4-pin method. Well visible columnar structure and in most cases voided other regions were observed at the grain boundaries by TEM. EELS measurements were carried out to characterize the grain boundaries, and the results show spacing voids between columnar grains at samples with high specific resistance, while no spacing voids were observed at highly conductive samples. SE measurements were evaluated by using the analytical expression suggested by Yoshikawa and Adachi [H. Yoshikawa, S. Adachi, Japanese Journal of Applied Physics 36 (1997) 6237], and the results show correlation between specific resistance and band gap energy and direct exciton strength parameter.

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