Optical absorption edge and some shallow donor levels in LiNbO3 systems

G. Corradi, L. Kovács, I. M. Zaritskii

Research output: Contribution to journalArticle

Abstract

In LiNbO3 the position of the conduction band edge formed by Nb 4d states strongly depends on the presence of antisite niobiums (Nb on Li site) lowering the band edge. Based on this property the measurement of the UV absorption edge can be used for determining the Li/Nb ratio in the crystal with high precision, especially in the near-stoichiometric region where the relative precision is 0.01 mol%. The same Nb states can form shallow donor levels due to nearby impurities and/or the polaron effect. Charge transfer processes between Nb5+/4+ polaron and Ti4+/3+ shallow donor levels and Jahn-Teller effects of the involved d1 paramagnetic states have been observed in reduced LiNbO3: Mg : Ti and are compared with literature results in LiNbO3: Ti.

Original languageEnglish
Pages (from-to)211-219
Number of pages9
JournalRadiation Effects and Defects in Solids
Volume150
Issue number1-4
Publication statusPublished - 1999

Fingerprint

Jahn-Teller effect
Conduction bands
Light absorption
Charge transfer
Gene Conversion
optical absorption
Impurities
Crystals
conduction bands
charge transfer
impurities
crystals
lithium niobate

Keywords

  • Jahn-Teller effect
  • Lithium niobate
  • Optical absorption edge
  • Polarons
  • Shallow donors
  • Titanium centers

ASJC Scopus subject areas

  • Nuclear Energy and Engineering
  • Radiation
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Optical absorption edge and some shallow donor levels in LiNbO3 systems. / Corradi, G.; Kovács, L.; Zaritskii, I. M.

In: Radiation Effects and Defects in Solids, Vol. 150, No. 1-4, 1999, p. 211-219.

Research output: Contribution to journalArticle

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