The decomposition of SiO//2 and other oxides under electron bombardment is a well known phenomenon. Experiments previously published were confined to thick SiO//2 samples, which made it impossible to control their surface temperature under electron bombardment. This difficulty was eliminated by studying very thin SiO//2 films on a tungsten surface. The temperature of 1-2 monolayers of SiO//2 is identical with the tungsten surface temperature, which can be determined from its resistivity and controlled. The temperature and primary electron flux dependence of the SiO//2 decomposition was studied by Auger electron spectroscopy. No decomposition takes place at room temperature. The decomposition cross section is strongly affected by crystal defects and temperature.
|Number of pages||4|
|Publication status||Published - Jan 1 1977|
|Event||Proc of the Int Vac Congr, 7th, and the Int Conf on Solid Surf, 3rd, of the Int Union for Vac Sci, Tech and Appl - Vienna, Austria|
Duration: Sep 12 1977 → Sep 16 1977
|Other||Proc of the Int Vac Congr, 7th, and the Int Conf on Solid Surf, 3rd, of the Int Union for Vac Sci, Tech and Appl|
|Period||9/12/77 → 9/16/77|
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