ON THE TEMPERATURE DEPENDENCE OF DECOMPOSITION OF VERY THIN SiO2 FILMS UNDER ELECTRON BOMBARDMENT.

Research output: Contribution to conferencePaper

Abstract

The decomposition of SiO//2 and other oxides under electron bombardment is a well known phenomenon. Experiments previously published were confined to thick SiO//2 samples, which made it impossible to control their surface temperature under electron bombardment. This difficulty was eliminated by studying very thin SiO//2 films on a tungsten surface. The temperature of 1-2 monolayers of SiO//2 is identical with the tungsten surface temperature, which can be determined from its resistivity and controlled. The temperature and primary electron flux dependence of the SiO//2 decomposition was studied by Auger electron spectroscopy. No decomposition takes place at room temperature. The decomposition cross section is strongly affected by crystal defects and temperature.

Original languageEnglish
Pages2165-2168
Number of pages4
Publication statusPublished - Jan 1 1977
EventProc of the Int Vac Congr, 7th, and the Int Conf on Solid Surf, 3rd, of the Int Union for Vac Sci, Tech and Appl - Vienna, Austria
Duration: Sep 12 1977Sep 16 1977

Other

OtherProc of the Int Vac Congr, 7th, and the Int Conf on Solid Surf, 3rd, of the Int Union for Vac Sci, Tech and Appl
CityVienna, Austria
Period9/12/779/16/77

ASJC Scopus subject areas

  • Engineering(all)

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    Menyhard, M., & Gergely, G. (1977). ON THE TEMPERATURE DEPENDENCE OF DECOMPOSITION OF VERY THIN SiO2 FILMS UNDER ELECTRON BOMBARDMENT.. 2165-2168. Paper presented at Proc of the Int Vac Congr, 7th, and the Int Conf on Solid Surf, 3rd, of the Int Union for Vac Sci, Tech and Appl, Vienna, Austria, .