ON THE TEMPERATURE DEPENDENCE OF DECOMPOSITION OF VERY THIN SiO//2 FILMS UNDER ELECTRON BOMBARDMENT.

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

The decomposition of SiO//2 and other oxides under electron bombardment is a well known phenomenon. Experiments previously published were confined to thick SiO//2 samples, which made it impossible to control their surface temperature under electron bombardment. This difficulty was eliminated by studying very thin SiO//2 films on a tungsten surface. The temperature of 1-2 monolayers of SiO//2 is identical with the tungsten surface temperature, which can be determined from its resistivity and controlled. The temperature and primary electron flux dependence of the SiO//2 decomposition was studied by Auger electron spectroscopy. No decomposition takes place at room temperature. The decomposition cross section is strongly affected by crystal defects and temperature.

Original languageEnglish
Title of host publicationUnknown Host Publication Title
PublisherInt Union for Vac Sci, Tech and Appl
Pages2165-2168
Number of pages4
Volume3
Publication statusPublished - 1977
EventProc of the Int Vac Congr, 7th, and the Int Conf on Solid Surf, 3rd, of the Int Union for Vac Sci, Tech and Appl - Vienna, Austria
Duration: Sep 12 1977Sep 16 1977

Other

OtherProc of the Int Vac Congr, 7th, and the Int Conf on Solid Surf, 3rd, of the Int Union for Vac Sci, Tech and Appl
CityVienna, Austria
Period9/12/779/16/77

Fingerprint

Decomposition
Electrons
Temperature
Tungsten
Control surfaces
Crystal defects
Auger electron spectroscopy
Monolayers
Fluxes
Oxides
Experiments

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Menyhárd, M., & Gergely, G. (1977). ON THE TEMPERATURE DEPENDENCE OF DECOMPOSITION OF VERY THIN SiO//2 FILMS UNDER ELECTRON BOMBARDMENT. In Unknown Host Publication Title (Vol. 3, pp. 2165-2168). Int Union for Vac Sci, Tech and Appl.

ON THE TEMPERATURE DEPENDENCE OF DECOMPOSITION OF VERY THIN SiO//2 FILMS UNDER ELECTRON BOMBARDMENT. / Menyhárd, M.; Gergely, G.

Unknown Host Publication Title. Vol. 3 Int Union for Vac Sci, Tech and Appl, 1977. p. 2165-2168.

Research output: Chapter in Book/Report/Conference proceedingChapter

Menyhárd, M & Gergely, G 1977, ON THE TEMPERATURE DEPENDENCE OF DECOMPOSITION OF VERY THIN SiO//2 FILMS UNDER ELECTRON BOMBARDMENT. in Unknown Host Publication Title. vol. 3, Int Union for Vac Sci, Tech and Appl, pp. 2165-2168, Proc of the Int Vac Congr, 7th, and the Int Conf on Solid Surf, 3rd, of the Int Union for Vac Sci, Tech and Appl, Vienna, Austria, 9/12/77.
Menyhárd M, Gergely G. ON THE TEMPERATURE DEPENDENCE OF DECOMPOSITION OF VERY THIN SiO//2 FILMS UNDER ELECTRON BOMBARDMENT. In Unknown Host Publication Title. Vol. 3. Int Union for Vac Sci, Tech and Appl. 1977. p. 2165-2168
Menyhárd, M. ; Gergely, G. / ON THE TEMPERATURE DEPENDENCE OF DECOMPOSITION OF VERY THIN SiO//2 FILMS UNDER ELECTRON BOMBARDMENT. Unknown Host Publication Title. Vol. 3 Int Union for Vac Sci, Tech and Appl, 1977. pp. 2165-2168
@inbook{760f152899a3491fa1e94d09d5368953,
title = "ON THE TEMPERATURE DEPENDENCE OF DECOMPOSITION OF VERY THIN SiO//2 FILMS UNDER ELECTRON BOMBARDMENT.",
abstract = "The decomposition of SiO//2 and other oxides under electron bombardment is a well known phenomenon. Experiments previously published were confined to thick SiO//2 samples, which made it impossible to control their surface temperature under electron bombardment. This difficulty was eliminated by studying very thin SiO//2 films on a tungsten surface. The temperature of 1-2 monolayers of SiO//2 is identical with the tungsten surface temperature, which can be determined from its resistivity and controlled. The temperature and primary electron flux dependence of the SiO//2 decomposition was studied by Auger electron spectroscopy. No decomposition takes place at room temperature. The decomposition cross section is strongly affected by crystal defects and temperature.",
author = "M. Menyh{\'a}rd and G. Gergely",
year = "1977",
language = "English",
volume = "3",
pages = "2165--2168",
booktitle = "Unknown Host Publication Title",
publisher = "Int Union for Vac Sci, Tech and Appl",

}

TY - CHAP

T1 - ON THE TEMPERATURE DEPENDENCE OF DECOMPOSITION OF VERY THIN SiO//2 FILMS UNDER ELECTRON BOMBARDMENT.

AU - Menyhárd, M.

AU - Gergely, G.

PY - 1977

Y1 - 1977

N2 - The decomposition of SiO//2 and other oxides under electron bombardment is a well known phenomenon. Experiments previously published were confined to thick SiO//2 samples, which made it impossible to control their surface temperature under electron bombardment. This difficulty was eliminated by studying very thin SiO//2 films on a tungsten surface. The temperature of 1-2 monolayers of SiO//2 is identical with the tungsten surface temperature, which can be determined from its resistivity and controlled. The temperature and primary electron flux dependence of the SiO//2 decomposition was studied by Auger electron spectroscopy. No decomposition takes place at room temperature. The decomposition cross section is strongly affected by crystal defects and temperature.

AB - The decomposition of SiO//2 and other oxides under electron bombardment is a well known phenomenon. Experiments previously published were confined to thick SiO//2 samples, which made it impossible to control their surface temperature under electron bombardment. This difficulty was eliminated by studying very thin SiO//2 films on a tungsten surface. The temperature of 1-2 monolayers of SiO//2 is identical with the tungsten surface temperature, which can be determined from its resistivity and controlled. The temperature and primary electron flux dependence of the SiO//2 decomposition was studied by Auger electron spectroscopy. No decomposition takes place at room temperature. The decomposition cross section is strongly affected by crystal defects and temperature.

UR - http://www.scopus.com/inward/record.url?scp=0017696398&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0017696398&partnerID=8YFLogxK

M3 - Chapter

AN - SCOPUS:0017696398

VL - 3

SP - 2165

EP - 2168

BT - Unknown Host Publication Title

PB - Int Union for Vac Sci, Tech and Appl

ER -