ON THE ROLE OF SPACE-CHARGE SCATTERING IN EPITAXIAL GaAs.

B. Podor, N. Nador, I. Bertóti

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

Electron mobility was measured in liquid phase epitaxial GaAs of moderate purity. The relevant charge carrier scattering mechanisms were investigated. It is found that the measured mobility can only be interpretated taking into account scattering on space-charge regions besides lattice and impurity scattering. The implications of space-charge scattering are discussed and it is suggested that this scattering mechanism is an almost universally occurring phenomenon in GaAs and presumably in other compound semiconductors, too.

Original languageEnglish
Pages (from-to)173-182
Number of pages10
JournalPhysica Status Solidi (A) Applied Research
Volume29
Issue number1
Publication statusPublished - May 1975

Fingerprint

Electric space charge
space charge
Scattering
scattering
Electron mobility
Charge carriers
electron mobility
charge carriers
purity
liquid phases
gallium arsenide
Impurities
Semiconductor materials
impurities
Liquids

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

ON THE ROLE OF SPACE-CHARGE SCATTERING IN EPITAXIAL GaAs. / Podor, B.; Nador, N.; Bertóti, I.

In: Physica Status Solidi (A) Applied Research, Vol. 29, No. 1, 05.1975, p. 173-182.

Research output: Contribution to journalArticle

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