Abstract
In order to provide a consistent explanation of the operation, the factors contributing to the current through an MPS diode were analysed in forward biasing on an n-type, mesoporous structure. The diodes having a degenerate n-doped ITO metallisation were characterised by recording the temperature dependent I-V characteristics in a vacuum cryostat in the temperature range of T = 100 K to 300 K. A systematic deconvolution of the obtained I-V curves, after stripping them from the contributions of ohmic conductance, resulted in a purely Fowler-Nordheim tunnelling behaviour. The present analysis in forward operation lead to very similar results as obtained formerly in the reverse biasing case [Molnar et al., J. Lumin. 80.91 (1991)], except that no significant electroluminescence was observed here.
| Original language | English |
|---|---|
| Pages (from-to) | 446-451 |
| Number of pages | 6 |
| Journal | Physica Status Solidi (A) Applied Research |
| Volume | 197 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - May 2003 |
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ASJC Scopus subject areas
- Condensed Matter Physics
- Electronic, Optical and Magnetic Materials
Cite this
On the nature of metal-porous Si-single crystal silicon (MPS) diodes. / Molnár, K.; Mohácsy, T.; Abdulhadi, A. H.; Volk, J.; Bársony, I.
In: Physica Status Solidi (A) Applied Research, Vol. 197, No. 2, 05.2003, p. 446-451.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - On the nature of metal-porous Si-single crystal silicon (MPS) diodes
AU - Molnár, K.
AU - Mohácsy, T.
AU - Abdulhadi, A. H.
AU - Volk, J.
AU - Bársony, I.
PY - 2003/5
Y1 - 2003/5
N2 - In order to provide a consistent explanation of the operation, the factors contributing to the current through an MPS diode were analysed in forward biasing on an n-type, mesoporous structure. The diodes having a degenerate n-doped ITO metallisation were characterised by recording the temperature dependent I-V characteristics in a vacuum cryostat in the temperature range of T = 100 K to 300 K. A systematic deconvolution of the obtained I-V curves, after stripping them from the contributions of ohmic conductance, resulted in a purely Fowler-Nordheim tunnelling behaviour. The present analysis in forward operation lead to very similar results as obtained formerly in the reverse biasing case [Molnar et al., J. Lumin. 80.91 (1991)], except that no significant electroluminescence was observed here.
AB - In order to provide a consistent explanation of the operation, the factors contributing to the current through an MPS diode were analysed in forward biasing on an n-type, mesoporous structure. The diodes having a degenerate n-doped ITO metallisation were characterised by recording the temperature dependent I-V characteristics in a vacuum cryostat in the temperature range of T = 100 K to 300 K. A systematic deconvolution of the obtained I-V curves, after stripping them from the contributions of ohmic conductance, resulted in a purely Fowler-Nordheim tunnelling behaviour. The present analysis in forward operation lead to very similar results as obtained formerly in the reverse biasing case [Molnar et al., J. Lumin. 80.91 (1991)], except that no significant electroluminescence was observed here.
UR - http://www.scopus.com/inward/record.url?scp=0037933415&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0037933415&partnerID=8YFLogxK
U2 - 10.1002/pssa.200306542
DO - 10.1002/pssa.200306542
M3 - Article
AN - SCOPUS:0037933415
VL - 197
SP - 446
EP - 451
JO - Physica Status Solidi (A) Applied Research
JF - Physica Status Solidi (A) Applied Research
SN - 0031-8965
IS - 2
ER -