On the nature of metal-porous Si-single crystal silicon (MPS) diodes

K. Molnár, T. Mohácsy, A. H. Abdulhadi, J. Volk, I. Bársony

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

In order to provide a consistent explanation of the operation, the factors contributing to the current through an MPS diode were analysed in forward biasing on an n-type, mesoporous structure. The diodes having a degenerate n-doped ITO metallisation were characterised by recording the temperature dependent I-V characteristics in a vacuum cryostat in the temperature range of T = 100 K to 300 K. A systematic deconvolution of the obtained I-V curves, after stripping them from the contributions of ohmic conductance, resulted in a purely Fowler-Nordheim tunnelling behaviour. The present analysis in forward operation lead to very similar results as obtained formerly in the reverse biasing case [Molnar et al., J. Lumin. 80.91 (1991)], except that no significant electroluminescence was observed here.

Original languageEnglish
Pages (from-to)446-451
Number of pages6
JournalPhysica Status Solidi (A) Applied Research
Volume197
Issue number2
DOIs
Publication statusPublished - May 2003

Fingerprint

Silicon
Diodes
Metals
diodes
Single crystals
Cryostats
single crystals
Electroluminescence
silicon
Deconvolution
cryostats
Metallizing
stripping
ITO (semiconductors)
Field emission
electroluminescence
metals
recording
Vacuum
Temperature

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

On the nature of metal-porous Si-single crystal silicon (MPS) diodes. / Molnár, K.; Mohácsy, T.; Abdulhadi, A. H.; Volk, J.; Bársony, I.

In: Physica Status Solidi (A) Applied Research, Vol. 197, No. 2, 05.2003, p. 446-451.

Research output: Contribution to journalArticle

Molnár, K. ; Mohácsy, T. ; Abdulhadi, A. H. ; Volk, J. ; Bársony, I. / On the nature of metal-porous Si-single crystal silicon (MPS) diodes. In: Physica Status Solidi (A) Applied Research. 2003 ; Vol. 197, No. 2. pp. 446-451.
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