On the nature of metal-porous Si-single crystal silicon (MPS) diodes

K. Molnár; T. Mohácsy; A. H. Abdulhadi; J. Volk; I. Bársony

doi:10.1002/pssa.200306542

On the nature of metal-porous Si-single crystal silicon (MPS) diodes

K. Molnár, T. Mohácsy, A. H. Abdulhadi, J. Volk, I. Bársony

Pannon University

Research output: Contribution to journal › Article

3 Citations (Scopus)

Abstract

In order to provide a consistent explanation of the operation, the factors contributing to the current through an MPS diode were analysed in forward biasing on an n-type, mesoporous structure. The diodes having a degenerate n-doped ITO metallisation were characterised by recording the temperature dependent I-V characteristics in a vacuum cryostat in the temperature range of T = 100 K to 300 K. A systematic deconvolution of the obtained I-V curves, after stripping them from the contributions of ohmic conductance, resulted in a purely Fowler-Nordheim tunnelling behaviour. The present analysis in forward operation lead to very similar results as obtained formerly in the reverse biasing case [Molnar et al., J. Lumin. 80.91 (1991)], except that no significant electroluminescence was observed here.

Original language	English
Pages (from-to)	446-451
Number of pages	6
Journal	Physica Status Solidi (A) Applied Research
Volume	197
Issue number	2
DOIs	https://doi.org/10.1002/pssa.200306542
Publication status	Published - May 2003

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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Molnár, K., Mohácsy, T., Abdulhadi, A. H., Volk, J., & Bársony, I. (2003). On the nature of metal-porous Si-single crystal silicon (MPS) diodes. Physica Status Solidi (A) Applied Research, 197(2), 446-451. https://doi.org/10.1002/pssa.200306542

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abstract = "In order to provide a consistent explanation of the operation, the factors contributing to the current through an MPS diode were analysed in forward biasing on an n-type, mesoporous structure. The diodes having a degenerate n-doped ITO metallisation were characterised by recording the temperature dependent I-V characteristics in a vacuum cryostat in the temperature range of T = 100 K to 300 K. A systematic deconvolution of the obtained I-V curves, after stripping them from the contributions of ohmic conductance, resulted in a purely Fowler-Nordheim tunnelling behaviour. The present analysis in forward operation lead to very similar results as obtained formerly in the reverse biasing case [Molnar et al., J. Lumin. 80.91 (1991)], except that no significant electroluminescence was observed here.",

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