On the kinetic mechanism of Ga penetration in Al bicrystals under small residual stress

E. Glickman, J. Philibert, L. Shvinderman, D. Beke

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Thermodynamic conditions for spontaneous grain boundary wetting (GBW) and stress driven liquid metal embrittlement (LME) are related to each other. Kinetic mechanism responsible for fast GB penetration (GBP) under small stress is described. Dissolution-condensation mechanism of LME and linear fracture mechanics for calculation of crack profile are applied to the classical system "Al-liquid Ga". The results tend to support the idea that the recently observed fast linear penetration of Ga along 150° tilt 〈110〉 GB of Al should be considered as propagation of LME crack under small residual stress rather than as spontaneous GBW. With the residual tensile stress σ≈ 0.5MPa acting normal to the GB plane, all major findings reported for this model system are explained in semi quantitative way assuming that GB spreading coefficient is extremely small by its absolute value, i.e. that the system is near the threshold of spontaneous GBW.

Original languageEnglish
Pages (from-to)201-212
Number of pages12
JournalDefect and Diffusion Forum
Volume249
DOIs
Publication statusPublished - 2006

Fingerprint

Bicrystals
embrittlement
bicrystals
Embrittlement
liquid metals
Liquid metals
wetting
residual stress
Wetting
Residual stresses
Grain boundaries
penetration
grain boundaries
Kinetics
kinetics
cracks
Cracks
fracture mechanics
tensile stress
Fracture mechanics

Keywords

  • Al-Ga system
  • Dissolution Condensation Mechanism
  • Grain boundary wetting
  • Liquid metal embrittlement
  • Residual stress

ASJC Scopus subject areas

  • Metals and Alloys

Cite this

On the kinetic mechanism of Ga penetration in Al bicrystals under small residual stress. / Glickman, E.; Philibert, J.; Shvinderman, L.; Beke, D.

In: Defect and Diffusion Forum, Vol. 249, 2006, p. 201-212.

Research output: Contribution to journalArticle

Glickman, E. ; Philibert, J. ; Shvinderman, L. ; Beke, D. / On the kinetic mechanism of Ga penetration in Al bicrystals under small residual stress. In: Defect and Diffusion Forum. 2006 ; Vol. 249. pp. 201-212.
@article{4876e65644da4ae29ba0e9c7e5003228,
title = "On the kinetic mechanism of Ga penetration in Al bicrystals under small residual stress",
abstract = "Thermodynamic conditions for spontaneous grain boundary wetting (GBW) and stress driven liquid metal embrittlement (LME) are related to each other. Kinetic mechanism responsible for fast GB penetration (GBP) under small stress is described. Dissolution-condensation mechanism of LME and linear fracture mechanics for calculation of crack profile are applied to the classical system {"}Al-liquid Ga{"}. The results tend to support the idea that the recently observed fast linear penetration of Ga along 150° tilt 〈110〉 GB of Al should be considered as propagation of LME crack under small residual stress rather than as spontaneous GBW. With the residual tensile stress σ≈ 0.5MPa acting normal to the GB plane, all major findings reported for this model system are explained in semi quantitative way assuming that GB spreading coefficient is extremely small by its absolute value, i.e. that the system is near the threshold of spontaneous GBW.",
keywords = "Al-Ga system, Dissolution Condensation Mechanism, Grain boundary wetting, Liquid metal embrittlement, Residual stress",
author = "E. Glickman and J. Philibert and L. Shvinderman and D. Beke",
year = "2006",
doi = "10.4028/3-908451-17-5.201",
language = "English",
volume = "249",
pages = "201--212",
journal = "Defect and Diffusion Forum",
issn = "1012-0386",
publisher = "Trans Tech Publications",

}

TY - JOUR

T1 - On the kinetic mechanism of Ga penetration in Al bicrystals under small residual stress

AU - Glickman, E.

AU - Philibert, J.

AU - Shvinderman, L.

AU - Beke, D.

PY - 2006

Y1 - 2006

N2 - Thermodynamic conditions for spontaneous grain boundary wetting (GBW) and stress driven liquid metal embrittlement (LME) are related to each other. Kinetic mechanism responsible for fast GB penetration (GBP) under small stress is described. Dissolution-condensation mechanism of LME and linear fracture mechanics for calculation of crack profile are applied to the classical system "Al-liquid Ga". The results tend to support the idea that the recently observed fast linear penetration of Ga along 150° tilt 〈110〉 GB of Al should be considered as propagation of LME crack under small residual stress rather than as spontaneous GBW. With the residual tensile stress σ≈ 0.5MPa acting normal to the GB plane, all major findings reported for this model system are explained in semi quantitative way assuming that GB spreading coefficient is extremely small by its absolute value, i.e. that the system is near the threshold of spontaneous GBW.

AB - Thermodynamic conditions for spontaneous grain boundary wetting (GBW) and stress driven liquid metal embrittlement (LME) are related to each other. Kinetic mechanism responsible for fast GB penetration (GBP) under small stress is described. Dissolution-condensation mechanism of LME and linear fracture mechanics for calculation of crack profile are applied to the classical system "Al-liquid Ga". The results tend to support the idea that the recently observed fast linear penetration of Ga along 150° tilt 〈110〉 GB of Al should be considered as propagation of LME crack under small residual stress rather than as spontaneous GBW. With the residual tensile stress σ≈ 0.5MPa acting normal to the GB plane, all major findings reported for this model system are explained in semi quantitative way assuming that GB spreading coefficient is extremely small by its absolute value, i.e. that the system is near the threshold of spontaneous GBW.

KW - Al-Ga system

KW - Dissolution Condensation Mechanism

KW - Grain boundary wetting

KW - Liquid metal embrittlement

KW - Residual stress

UR - http://www.scopus.com/inward/record.url?scp=33645328034&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33645328034&partnerID=8YFLogxK

U2 - 10.4028/3-908451-17-5.201

DO - 10.4028/3-908451-17-5.201

M3 - Article

AN - SCOPUS:33645328034

VL - 249

SP - 201

EP - 212

JO - Defect and Diffusion Forum

JF - Defect and Diffusion Forum

SN - 1012-0386

ER -