On the defect pattern evolution in sapphire irradiated by swift ions in a broad fluence range

P. M. Gordo, L. Liszkay, Zs Kajcsos, K. Havancsák, V. A. Skuratov, G. Kögel, P. Sperr, W. Egger, A. P. de Lima, M. F. Ferreira Marques

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Sapphire samples, irradiated with swift Kr (245 MeV) ions at room temperature in a broad fluence range, were investigated using a continuous and a pulsed positron beam to study the defect structure created by the passage of the ions in depths of a few micrometers. At small doses, monovacancies were identified as dominant defects and positron trapping centres. These monovacancies are assumed to be highly concentrated inside a cylindrical volume around the ion path with an estimated radius of ∼1.5 nm. For higher doses a second type of trapping centre emerges. This second class of structural imperfection was associated with the overlap of the individual ion tracks leading to the formation of larger vacancy clusters or voids.

Original languageEnglish
Pages (from-to)254-256
Number of pages3
JournalApplied Surface Science
Volume255
Issue number1
DOIs
Publication statusPublished - Oct 31 2008

Keywords

  • Al O
  • Defects
  • Doppler broadening
  • Positron lifetimes
  • Positron trapping
  • Sapphire

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Fingerprint Dive into the research topics of 'On the defect pattern evolution in sapphire irradiated by swift ions in a broad fluence range'. Together they form a unique fingerprint.

  • Cite this

    Gordo, P. M., Liszkay, L., Kajcsos, Z., Havancsák, K., Skuratov, V. A., Kögel, G., Sperr, P., Egger, W., de Lima, A. P., & Ferreira Marques, M. F. (2008). On the defect pattern evolution in sapphire irradiated by swift ions in a broad fluence range. Applied Surface Science, 255(1), 254-256. https://doi.org/10.1016/j.apsusc.2008.05.185