### Abstract

For the relative amplitude of the random telegraph signal noise (RTS) in a MOS transistor ΔG/G = ΔI/I = 1/N = qg_{m}/WlC_{ox}I often holds with N the total number of free carriers. Here, strong deviations from this simple behavior will be explained in terms of strategic (high field region) or less strategic trap positions (low field region) in a non-uniform channel ignoring mobility modulation. Calculations show that in a channel with W = 10^{3} and a nonuniform current distribution, the relative RTS amplitude can vary between 10^{-5} and 10^{-2}. The analytical expressions to calculate the relative amplitude of the RTS noise for two and four terminal geometries are presented. The levelling off in the 1/N dependence for extremely low N in the subthreshold region is explained via the solution of the Poisson equation showing that this phenomenon occurs for Q_{depletion}≥Q_{inversion} even in a uniform channel.

Original language | English |
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Pages (from-to) | 901-905 |

Number of pages | 5 |

Journal | Solid-State Electronics |

Volume | 42 |

Issue number | 6 |

Publication status | Published - Jun 1998 |

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### ASJC Scopus subject areas

- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics

### Cite this

*Solid-State Electronics*,

*42*(6), 901-905.

**On the Anomalous Behavior of the Relative Amplitude of Rts Noise.** / Vandamme, L. K J; Sodini, D.; Gingl, Z.

Research output: Contribution to journal › Article

*Solid-State Electronics*, vol. 42, no. 6, pp. 901-905.

}

TY - JOUR

T1 - On the Anomalous Behavior of the Relative Amplitude of Rts Noise

AU - Vandamme, L. K J

AU - Sodini, D.

AU - Gingl, Z.

PY - 1998/6

Y1 - 1998/6

N2 - For the relative amplitude of the random telegraph signal noise (RTS) in a MOS transistor ΔG/G = ΔI/I = 1/N = qgm/WlCoxI often holds with N the total number of free carriers. Here, strong deviations from this simple behavior will be explained in terms of strategic (high field region) or less strategic trap positions (low field region) in a non-uniform channel ignoring mobility modulation. Calculations show that in a channel with W = 103 and a nonuniform current distribution, the relative RTS amplitude can vary between 10-5 and 10-2. The analytical expressions to calculate the relative amplitude of the RTS noise for two and four terminal geometries are presented. The levelling off in the 1/N dependence for extremely low N in the subthreshold region is explained via the solution of the Poisson equation showing that this phenomenon occurs for Qdepletion≥Qinversion even in a uniform channel.

AB - For the relative amplitude of the random telegraph signal noise (RTS) in a MOS transistor ΔG/G = ΔI/I = 1/N = qgm/WlCoxI often holds with N the total number of free carriers. Here, strong deviations from this simple behavior will be explained in terms of strategic (high field region) or less strategic trap positions (low field region) in a non-uniform channel ignoring mobility modulation. Calculations show that in a channel with W = 103 and a nonuniform current distribution, the relative RTS amplitude can vary between 10-5 and 10-2. The analytical expressions to calculate the relative amplitude of the RTS noise for two and four terminal geometries are presented. The levelling off in the 1/N dependence for extremely low N in the subthreshold region is explained via the solution of the Poisson equation showing that this phenomenon occurs for Qdepletion≥Qinversion even in a uniform channel.

UR - http://www.scopus.com/inward/record.url?scp=0032093055&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032093055&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0032093055

VL - 42

SP - 901

EP - 905

JO - Solid-State Electronics

JF - Solid-State Electronics

SN - 0038-1101

IS - 6

ER -