On the Anomalous Behavior of the Relative Amplitude of Rts Noise

L. K.J. Vandamme, D. Sodini, Z. Gingl

Research output: Contribution to journalArticle

32 Citations (Scopus)

Abstract

For the relative amplitude of the random telegraph signal noise (RTS) in a MOS transistor ΔG/G = ΔI/I = 1/N = qgm/WlCoxI often holds with N the total number of free carriers. Here, strong deviations from this simple behavior will be explained in terms of strategic (high field region) or less strategic trap positions (low field region) in a non-uniform channel ignoring mobility modulation. Calculations show that in a channel with W = 103 and a nonuniform current distribution, the relative RTS amplitude can vary between 10-5 and 10-2. The analytical expressions to calculate the relative amplitude of the RTS noise for two and four terminal geometries are presented. The levelling off in the 1/N dependence for extremely low N in the subthreshold region is explained via the solution of the Poisson equation showing that this phenomenon occurs for Qdepletion≥Qinversion even in a uniform channel.

Original languageEnglish
Pages (from-to)901-905
Number of pages5
JournalSolid-State Electronics
Volume42
Issue number6
DOIs
Publication statusPublished - Jun 1998

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Fingerprint Dive into the research topics of 'On the Anomalous Behavior of the Relative Amplitude of Rts Noise'. Together they form a unique fingerprint.

  • Cite this