For the relative amplitude of the random telegraph signal noise (RTS) in a MOS transistor ΔG/G = ΔI/I = 1/N = qgm/WlCoxI often holds with N the total number of free carriers. Here, strong deviations from this simple behavior will be explained in terms of strategic (high field region) or less strategic trap positions (low field region) in a non-uniform channel ignoring mobility modulation. Calculations show that in a channel with W = 103 and a nonuniform current distribution, the relative RTS amplitude can vary between 10-5 and 10-2. The analytical expressions to calculate the relative amplitude of the RTS noise for two and four terminal geometries are presented. The levelling off in the 1/N dependence for extremely low N in the subthreshold region is explained via the solution of the Poisson equation showing that this phenomenon occurs for Qdepletion≥Qinversion even in a uniform channel.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry