On the Anomalous Behavior of the Relative Amplitude of Rts Noise

L. K J Vandamme, D. Sodini, Z. Gingl

Research output: Contribution to journalArticle

31 Citations (Scopus)

Abstract

For the relative amplitude of the random telegraph signal noise (RTS) in a MOS transistor ΔG/G = ΔI/I = 1/N = qgm/WlCoxI often holds with N the total number of free carriers. Here, strong deviations from this simple behavior will be explained in terms of strategic (high field region) or less strategic trap positions (low field region) in a non-uniform channel ignoring mobility modulation. Calculations show that in a channel with W = 103 and a nonuniform current distribution, the relative RTS amplitude can vary between 10-5 and 10-2. The analytical expressions to calculate the relative amplitude of the RTS noise for two and four terminal geometries are presented. The levelling off in the 1/N dependence for extremely low N in the subthreshold region is explained via the solution of the Poisson equation showing that this phenomenon occurs for Qdepletion≥Qinversion even in a uniform channel.

Original languageEnglish
Pages (from-to)901-905
Number of pages5
JournalSolid-State Electronics
Volume42
Issue number6
Publication statusPublished - Jun 1998

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Telegraph
Poisson equation
MOSFET devices
leveling
current distribution
Modulation
transistors
Geometry
traps
deviation
modulation
geometry

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

On the Anomalous Behavior of the Relative Amplitude of Rts Noise. / Vandamme, L. K J; Sodini, D.; Gingl, Z.

In: Solid-State Electronics, Vol. 42, No. 6, 06.1998, p. 901-905.

Research output: Contribution to journalArticle

Vandamme, L. K J ; Sodini, D. ; Gingl, Z. / On the Anomalous Behavior of the Relative Amplitude of Rts Noise. In: Solid-State Electronics. 1998 ; Vol. 42, No. 6. pp. 901-905.
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