Observation of semiconductor superstructures with backscattered electrons in a scanning electron microscope

A. Bosacchi, S. Franchi, D. Govoni, G. Mattei, P. G. Merli, A. Migliori, M. Nacucchi

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

Observations of semiconductor superstructures with backscattered electrons in a scanning electron microscope have been used to revisit the concept of resolution of the backscattering imaging mode. It will be shown that the generation volume doesn't represent in itself a limit to the resolution, which depends only on the beam size and the signal to noise ratio.

Original languageEnglish
Pages (from-to)443-448
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume354
Publication statusPublished - Dec 1 1995
EventProceedings of the 1994 MRS Fall Meeting - Boston, MA, USA
Duration: Nov 28 1994Dec 2 1994

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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