Observation of local SIMOX layers by microprobe RBS

A. Kinomura, Y. Horino, Y. Mokuno, A. Chayahara, M. Kiuchi, K. Fujii, M. Takai, T. Lohner, H. Ryssel, R. Schork

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Abstract

Buried oxide layers locally formed by oxygen implantation in silicon were analyzed by Rutherford backscattering with a 1.5 MeV He+ microprobe. Lateral and cross-sectional images of O and Si atoms in the buried oxide layers could be successfully obtained by scanning the microprobe over the sample. The Si images showed better contrasts than the O images. A process-failure region was detected by RBS mapping images.

Original languageEnglish
Pages (from-to)921-924
Number of pages4
JournalNuclear Inst. and Methods in Physics Research, B
Volume85
Issue number1-4
DOIs
Publication statusPublished - Mar 2 1994

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ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

Cite this

Kinomura, A., Horino, Y., Mokuno, Y., Chayahara, A., Kiuchi, M., Fujii, K., Takai, M., Lohner, T., Ryssel, H., & Schork, R. (1994). Observation of local SIMOX layers by microprobe RBS. Nuclear Inst. and Methods in Physics Research, B, 85(1-4), 921-924. https://doi.org/10.1016/0168-583X(94)95951-X