Observation of buried oxide layers in silicon by microprobe RBS

A. Kinomura, T. Lohner, Y. Katayama, M. Takai, H. Ryssel, R. Schork, A. Chayahara, Y. Horino, K. Fujii, M. Satou

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Buried oxide layers formed by implantation in silicon were observed by microprobe RBS with 1.5 MeV He+. A cross-sectional image of a local oxide layer was obtained by imaging the decrease in silicon signals. Uniformly implanted samples annealed at 1260 and 1300°C were observed by RBS-mapping images. A nonuniform region, indicating the absence of surface silicon, was found in the mapping images for annealing at 1260°C, while the buried and surface layers for annealing at 1300°C were found to be uniform.

Original languageEnglish
Pages (from-to)369-372
Number of pages4
JournalNuclear Inst. and Methods in Physics Research, B
Volume77
Issue number1-4
DOIs
Publication statusPublished - May 1 1993

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

Fingerprint Dive into the research topics of 'Observation of buried oxide layers in silicon by microprobe RBS'. Together they form a unique fingerprint.

  • Cite this

    Kinomura, A., Lohner, T., Katayama, Y., Takai, M., Ryssel, H., Schork, R., Chayahara, A., Horino, Y., Fujii, K., & Satou, M. (1993). Observation of buried oxide layers in silicon by microprobe RBS. Nuclear Inst. and Methods in Physics Research, B, 77(1-4), 369-372. https://doi.org/10.1016/0168-583X(93)95568-P