OBLIQUELY EVAPORATED SILICON OXIDE THIN FILMS STUDIED BY CROSS-SECTIONAL TRANSMISSION ELECTRON MICROSCOPY.

O. Geszti, L. Gosztola, E. Seyfried

Research output: Contribution to journalConference article

Abstract

Silicon oxide layers evaporated obliquely onto silicon substrates were investigated by transmission electron microscopy (TEM). Samples for TEM were prepared by grazing incidence ion-beam thinning of cross-sectional slices, the plane of which was determined by the normal of the film and the direction of evaporation. Increasing the angle of evaporation from 5 to 30 degree (measured from the plane of the substrate) a change from a well-defined columnar structure to a striated structure was observed. The angle of columns increases either with increasing angle of evaporation at fixed rate or with decreasing rate of evaporation at fixed angle.

Original languageEnglish
Number of pages1
JournalVacuum
Volume37
Issue number1-2
Publication statusPublished - Dec 1 1985
EventHung-Austrian-Yugosl Third Jt Vac Conf - Debrecen, Hung
Duration: Oct 7 1985Oct 9 1985

ASJC Scopus subject areas

  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films

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