OBLIQUELY EVAPORATED SILICON OXIDE THIN FILMS STUDIED BY CROSS-SECTIONAL TRANSMISSION ELECTRON MICROSCOPY.

O. Geszti, L. Gosztola, E. Seyfried

Research output: Contribution to journalArticle

Abstract

Silicon oxide layers evaporated obliquely onto silicon substrates were investigated by transmission electron microscopy (TEM). Samples for TEM were prepared by grazing incidence ion-beam thinning of cross-sectional slices, the plane of which was determined by the normal of the film and the direction of evaporation. Increasing the angle of evaporation from 5 to 30 degree (measured from the plane of the substrate) a change from a well-defined columnar structure to a striated structure was observed. The angle of columns increases either with increasing angle of evaporation at fixed rate or with decreasing rate of evaporation at fixed angle.

Original languageEnglish
Pages (from-to)187
Number of pages1
JournalVacuum
Volume37
Issue number1-2
Publication statusPublished - 1985

Fingerprint

Silicon oxides
silicon oxides
Oxide films
Evaporation
evaporation
Transmission electron microscopy
Thin films
transmission electron microscopy
thin films
Distillation columns
Silicon
Substrates
grazing incidence
Ion beams
ion beams
silicon

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

OBLIQUELY EVAPORATED SILICON OXIDE THIN FILMS STUDIED BY CROSS-SECTIONAL TRANSMISSION ELECTRON MICROSCOPY. / Geszti, O.; Gosztola, L.; Seyfried, E.

In: Vacuum, Vol. 37, No. 1-2, 1985, p. 187.

Research output: Contribution to journalArticle

@article{6766cfd46ec04671ac90902ff566b0e4,
title = "OBLIQUELY EVAPORATED SILICON OXIDE THIN FILMS STUDIED BY CROSS-SECTIONAL TRANSMISSION ELECTRON MICROSCOPY.",
abstract = "Silicon oxide layers evaporated obliquely onto silicon substrates were investigated by transmission electron microscopy (TEM). Samples for TEM were prepared by grazing incidence ion-beam thinning of cross-sectional slices, the plane of which was determined by the normal of the film and the direction of evaporation. Increasing the angle of evaporation from 5 to 30 degree (measured from the plane of the substrate) a change from a well-defined columnar structure to a striated structure was observed. The angle of columns increases either with increasing angle of evaporation at fixed rate or with decreasing rate of evaporation at fixed angle.",
author = "O. Geszti and L. Gosztola and E. Seyfried",
year = "1985",
language = "English",
volume = "37",
pages = "187",
journal = "Vacuum",
issn = "0042-207X",
publisher = "Elsevier Limited",
number = "1-2",

}

TY - JOUR

T1 - OBLIQUELY EVAPORATED SILICON OXIDE THIN FILMS STUDIED BY CROSS-SECTIONAL TRANSMISSION ELECTRON MICROSCOPY.

AU - Geszti, O.

AU - Gosztola, L.

AU - Seyfried, E.

PY - 1985

Y1 - 1985

N2 - Silicon oxide layers evaporated obliquely onto silicon substrates were investigated by transmission electron microscopy (TEM). Samples for TEM were prepared by grazing incidence ion-beam thinning of cross-sectional slices, the plane of which was determined by the normal of the film and the direction of evaporation. Increasing the angle of evaporation from 5 to 30 degree (measured from the plane of the substrate) a change from a well-defined columnar structure to a striated structure was observed. The angle of columns increases either with increasing angle of evaporation at fixed rate or with decreasing rate of evaporation at fixed angle.

AB - Silicon oxide layers evaporated obliquely onto silicon substrates were investigated by transmission electron microscopy (TEM). Samples for TEM were prepared by grazing incidence ion-beam thinning of cross-sectional slices, the plane of which was determined by the normal of the film and the direction of evaporation. Increasing the angle of evaporation from 5 to 30 degree (measured from the plane of the substrate) a change from a well-defined columnar structure to a striated structure was observed. The angle of columns increases either with increasing angle of evaporation at fixed rate or with decreasing rate of evaporation at fixed angle.

UR - http://www.scopus.com/inward/record.url?scp=0022327075&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0022327075&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0022327075

VL - 37

SP - 187

JO - Vacuum

JF - Vacuum

SN - 0042-207X

IS - 1-2

ER -