Numerical simulation of excess noise for degradation and failure of thin film resistors

C. Pennetta, Z. Gingl, L. B. Kiss, L. Reggiani

Research output: Contribution to conferencePaper

Abstract

We present a numerical simulation of excess noise aimed at monitoring degradation and failure of thin film resistors. A biased percolation model is used to introduce a generation of defects driven by local Joule heating. 1/f as well as Nyquist sources are considered. Equivalent noise temperatures, conveniently comparable with average thermal values, are obtained.

Original languageEnglish
Pages419-422
Number of pages4
Publication statusPublished - Dec 1 1997
EventProceedings of the 1997 14th International Conference on Noise in Physical Systems and 1/f Fluctuations - Leuven, Belgium
Duration: Jul 14 1997Jul 18 1997

Other

OtherProceedings of the 1997 14th International Conference on Noise in Physical Systems and 1/f Fluctuations
CityLeuven, Belgium
Period7/14/977/18/97

ASJC Scopus subject areas

  • Engineering(all)

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    Pennetta, C., Gingl, Z., Kiss, L. B., & Reggiani, L. (1997). Numerical simulation of excess noise for degradation and failure of thin film resistors. 419-422. Paper presented at Proceedings of the 1997 14th International Conference on Noise in Physical Systems and 1/f Fluctuations, Leuven, Belgium, .